TY - JOUR
T1 - Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5μm using aberration-corrected scanning transmission electron microscopy
AU - Kadkhodazadeh, Shima
AU - Semenova, Elizaveta
AU - Yvind, Kresten
AU - Dunin-Borkowski, Rafal E.
PY - 2011
Y1 - 2011
N2 - The emission wavelength of InAs quantum dots grown on InP has been shown to shift to the technologically desirable 1.5μm with the deposition of 1–2 monolayers of GaAs on top of the quantum dots. Here, we use aberration-corrected scanning transmission electron microscopy to investigate morphological and compositional changes occurring to the quantum dots as a result of the deposition of 1.7 monolayers of GaAs on top of them, prior to complete overgrowth with InP. The results are compared with theoretical models describing the overgrowth process.
AB - The emission wavelength of InAs quantum dots grown on InP has been shown to shift to the technologically desirable 1.5μm with the deposition of 1–2 monolayers of GaAs on top of the quantum dots. Here, we use aberration-corrected scanning transmission electron microscopy to investigate morphological and compositional changes occurring to the quantum dots as a result of the deposition of 1.7 monolayers of GaAs on top of them, prior to complete overgrowth with InP. The results are compared with theoretical models describing the overgrowth process.
U2 - 10.1016/j.jcrysgro.2011.06.037
DO - 10.1016/j.jcrysgro.2011.06.037
M3 - Journal article
SN - 0022-0248
VL - 329
SP - 57
EP - 61
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -