Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters

Yasser Nour; Arnold Knott; Ivan Harald Holger Jørgensen

doi:10.1049/cp.2016.0137

Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters

Yasser Nour, Arnold Knott, Ivan Harald Holger Jørgensen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

An increased attention has been detected to develop smaller and lighter high voltage power converters in the range of 50V to 400V domain. The main applications for these converters are mainly focused for Power over Ethernet (PoE), LED
lighting and AC adapters. This work will discuss a study of using enhancement mode gallium nitride switches to form a 50V quasi-square-wave zero-voltage-switching buck converter running at 2-6 MHz under full load. The designed
converter achieved 83% efficiency converting 50V input voltage to 12.2V at 9W load.

Original language	English
Title of host publication	Proceedings of the 8th IET International Conference on Power Electronics, Machines and Drives
Number of pages	5
Publisher	Institution of Engineering and Technology
Publication date	2016
ISBN (Print)	978-1785-61189-6
DOIs	https://doi.org/10.1049/cp.2016.0137
Publication status	Published - 2016
Event	The 8th IET International Conference on Power Electronics, Machines and Drives - The Hilton Hotel, Glasgow, United Kingdom Duration: 19 Apr 2016 → 21 Apr 2016

Conference

Conference	The 8th IET International Conference on Power Electronics, Machines and Drives
Location	The Hilton Hotel
Country/Territory	United Kingdom
City	Glasgow
Period	19/04/2016 → 21/04/2016

Keywords

Gallium Nitride
Soft Switching
ZVS Buck

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10.1049/cp.2016.0137

PEMD 2016 Full paper RevBAccepted author manuscript, 572 KB

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title = "Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters",

abstract = "An increased attention has been detected to develop smaller and lighter high voltage power converters in the range of 50V to 400V domain. The main applications for these converters are mainly focused for Power over Ethernet (PoE), LEDlighting and AC adapters. This work will discuss a study of using enhancement mode gallium nitride switches to form a 50V quasi-square-wave zero-voltage-switching buck converter running at 2-6 MHz under full load. The designedconverter achieved 83% efficiency converting 50V input voltage to 12.2V at 9W load. ",

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booktitle = "Proceedings of the 8th IET International Conference on Power Electronics, Machines and Drives",

publisher = "Institution of Engineering and Technology",

note = "The 8th IET International Conference on Power Electronics, Machines and Drives, PEMD 2016 ; Conference date: 19-04-2016 Through 21-04-2016",

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Nour, Y , Knott, A & Jørgensen, IHH 2016, Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters. in Proceedings of the 8th IET International Conference on Power Electronics, Machines and Drives. Institution of Engineering and Technology, The 8th IET International Conference on Power Electronics, Machines and Drives, Glasgow, United Kingdom, 19/04/2016. https://doi.org/10.1049/cp.2016.0137

Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters. / Nour, Yasser ; Knott, Arnold; Jørgensen, Ivan Harald Holger.
Proceedings of the 8th IET International Conference on Power Electronics, Machines and Drives. Institution of Engineering and Technology, 2016.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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KW - Soft Switching

KW - ZVS Buck

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Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters

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Keywords

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