Abstract
The interwell radiative recombination from biased double quantum wells (DQW) in pin GaAs/AlGaAs heterostructures is investigated at different temperatures and external electrical fields. The luminescence line of interwell recombination of spatially separated electron-hole pairs exhibits systematic narrowing with temperature increase from 4.5 to 30 K. A theoretical model is presented which explains the observed narrowing in terms of lateral thermally activated tunneling of spatially separated e-h pairs localized by random potential fluctuations in the quantum wells. (C) 1998 American Institute of Physics. [S0021-3640(98)01208-0]
Original language | English |
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Journal | J E T P Letters |
Volume | 67 |
Issue number | 8 |
Pages (from-to) | 613-620 |
ISSN | 0021-3640 |
DOIs | |
Publication status | Published - 1998 |