Interwell radiative recombination in the presence of random potential fluctuations in GaAs/AlGaAs biased double quantum wells

V.B. Timofeev, A.V. Larionov, A.S. Ioselevich, J. Zeman, G. Martinez, Jørn Märcher Hvam, Claus B. Sørensen

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    Abstract

    The interwell radiative recombination from biased double quantum wells (DQW) in pin GaAs/AlGaAs heterostructures is investigated at different temperatures and external electrical fields. The luminescence line of interwell recombination of spatially separated electron-hole pairs exhibits systematic narrowing with temperature increase from 4.5 to 30 K. A theoretical model is presented which explains the observed narrowing in terms of lateral thermally activated tunneling of spatially separated e-h pairs localized by random potential fluctuations in the quantum wells. (C) 1998 American Institute of Physics. [S0021-3640(98)01208-0]
    Original languageEnglish
    JournalJ E T P Letters
    Volume67
    Issue number8
    Pages (from-to)613-620
    ISSN0021-3640
    DOIs
    Publication statusPublished - 1998

    Cite this

    Timofeev, V. B., Larionov, A. V., Ioselevich, A. S., Zeman, J., Martinez, G., Hvam, J. M., & Sørensen, C. B. (1998). Interwell radiative recombination in the presence of random potential fluctuations in GaAs/AlGaAs biased double quantum wells. J E T P Letters, 67(8), 613-620. https://doi.org/10.1134/1.567735