Interwell Radiative Recombination in the Presence of Random Potential Fluctuations in GaAs/AlGaAs Biased Double Quantum Wells

V.B. Timofeev, A.V. Larionov, A.S. Ioselevich, J. Zeman, G. Martinez, V.I. Falko, Jørn Märcher Hvam, Claus B. Sørensen

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    The interwell luminescence (PL) of spatially separated e-h pairs exhibits systematic narrowing with temperature increase which are explained in terms of lateral thermo-activated tunneling of e-h pairs localized by random potential fluctuations (RPF). At critical temperatures the quasi-equilibrium of carriers, undergoes an abrupt transition. This occurs with significant redistribution of the electrical field inside the structure and give rise to a low frequency noice appearing in the luminescence. Below critical temperature the new steady state results in the accumulation of 2DEG in one of the well.
    Original languageEnglish
    Title of host publicationProceedings of the 24th International Conference on The Physics of Semiconductors
    Place of PublicationSingapore
    PublisherWorld Scientific
    Publication date1999
    Publication statusPublished - 1999
    Event24th International Conference on The Physics of Semiconductors - Jerusalem, Israel
    Duration: 2 Aug 19987 Aug 1998
    Conference number: 24
    http://physics.technion.ac.il/~icps24/

    Conference

    Conference24th International Conference on The Physics of Semiconductors
    Number24
    CountryIsrael
    CityJerusalem
    Period02/08/199807/08/1998
    Internet address

    Cite this

    Timofeev, V. B., Larionov, A. V., Ioselevich, A. S., Zeman, J., Martinez, G., Falko, V. I., ... Sørensen, C. B. (1999). Interwell Radiative Recombination in the Presence of Random Potential Fluctuations in GaAs/AlGaAs Biased Double Quantum Wells. In Proceedings of the 24th International Conference on The Physics of Semiconductors Singapore: World Scientific.