Interwell Radiative Recombination in the Presence of Random
                Potential Fluctuations in GaAs/AlGaAs Biased Double Quantum
                Wells

V.B. Timofeev; A.V. Larionov; A.S. Ioselevich; J. Zeman; G. Martinez; V.I. Falko; Jørn Märcher Hvam; Claus B. Sørensen

Interwell Radiative Recombination in the Presence of Random Potential Fluctuations in GaAs/AlGaAs Biased Double Quantum Wells

V.B. Timofeev, A.V. Larionov, A.S. Ioselevich, J. Zeman, G. Martinez, V.I. Falko, Jørn Märcher Hvam, Claus B. Sørensen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The interwell luminescence (PL) of spatially separated e-h pairs exhibits systematic narrowing with temperature increase which are explained in terms of lateral thermo-activated tunneling of e-h pairs localized by random potential fluctuations (RPF). At critical temperatures the quasi-equilibrium of carriers, undergoes an abrupt transition. This occurs with significant redistribution of the electrical field inside the structure and give rise to a low frequency noice appearing in the luminescence. Below critical temperature the new steady state results in the accumulation of 2DEG in one of the well.

Original language	English
Title of host publication	Proceedings of the 24th International Conference on The Physics of Semiconductors
Place of Publication	Singapore
Publisher	World Scientific
Publication date	1999
Publication status	Published - 1999
Event	24th International Conference on The Physics of Semiconductors - Jerusalem, Israel Duration: 2 Aug 1998 → 7 Aug 1998 Conference number: 24 http://physics.technion.ac.il/~icps24/

Conference

Conference	24th International Conference on The Physics of Semiconductors
Number	24
Country/Territory	Israel
City	Jerusalem
Period	02/08/1998 → 07/08/1998
Internet address	http://physics.technion.ac.il/~icps24/

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Timofeev, V. B., Larionov, A. V., Ioselevich, A. S., Zeman, J., Martinez, G., Falko, V. I., Hvam, J. M., & Sørensen, C. B. (1999). Interwell Radiative Recombination in the Presence of Random Potential Fluctuations in GaAs/AlGaAs Biased Double Quantum Wells. In Proceedings of the 24th International Conference on The Physics of Semiconductors World Scientific.

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title = "Interwell Radiative Recombination in the Presence of Random Potential Fluctuations in GaAs/AlGaAs Biased Double Quantum Wells",

abstract = "The interwell luminescence (PL) of spatially separated e-h pairs exhibits systematic narrowing with temperature increase which are explained in terms of lateral thermo-activated tunneling of e-h pairs localized by random potential fluctuations (RPF). At critical temperatures the quasi-equilibrium of carriers, undergoes an abrupt transition. This occurs with significant redistribution of the electrical field inside the structure and give rise to a low frequency noice appearing in the luminescence. Below critical temperature the new steady state results in the accumulation of 2DEG in one of the well.",

author = "V.B. Timofeev and A.V. Larionov and A.S. Ioselevich and J. Zeman and G. Martinez and V.I. Falko and Hvam, {J{\o}rn M{\"a}rcher} and S{\o}rensen, {Claus B.}",

year = "1999",

language = "English",

booktitle = "Proceedings of the 24th International Conference on The Physics of Semiconductors",

publisher = "World Scientific",

address = "Singapore",

note = "24th International Conference on The Physics of Semiconductors, ICPS 24 ; Conference date: 02-08-1998 Through 07-08-1998",

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Timofeev, VB, Larionov, AV, Ioselevich, AS, Zeman, J, Martinez, G, Falko, VI, Hvam, JM & Sørensen, CB 1999, Interwell Radiative Recombination in the Presence of Random Potential Fluctuations in GaAs/AlGaAs Biased Double Quantum Wells. in Proceedings of the 24th International Conference on The Physics of Semiconductors. World Scientific, Singapore, 24th International Conference on The Physics of Semiconductors, Jerusalem, Israel, 02/08/1998.

Interwell Radiative Recombination in the Presence of Random Potential Fluctuations in GaAs/AlGaAs Biased Double Quantum Wells. / Timofeev, V.B.; Larionov, A.V.; Ioselevich, A.S. et al.
Proceedings of the 24th International Conference on The Physics of Semiconductors. Singapore: World Scientific, 1999.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Interwell Radiative Recombination in the Presence of Random Potential Fluctuations in GaAs/AlGaAs Biased Double Quantum Wells

AU - Timofeev, V.B.

AU - Larionov, A.V.

AU - Ioselevich, A.S.

AU - Zeman, J.

AU - Martinez, G.

AU - Falko, V.I.

AU - Hvam, Jørn Märcher

AU - Sørensen, Claus B.

N1 - Conference code: 24

PY - 1999

Y1 - 1999

N2 - The interwell luminescence (PL) of spatially separated e-h pairs exhibits systematic narrowing with temperature increase which are explained in terms of lateral thermo-activated tunneling of e-h pairs localized by random potential fluctuations (RPF). At critical temperatures the quasi-equilibrium of carriers, undergoes an abrupt transition. This occurs with significant redistribution of the electrical field inside the structure and give rise to a low frequency noice appearing in the luminescence. Below critical temperature the new steady state results in the accumulation of 2DEG in one of the well.

AB - The interwell luminescence (PL) of spatially separated e-h pairs exhibits systematic narrowing with temperature increase which are explained in terms of lateral thermo-activated tunneling of e-h pairs localized by random potential fluctuations (RPF). At critical temperatures the quasi-equilibrium of carriers, undergoes an abrupt transition. This occurs with significant redistribution of the electrical field inside the structure and give rise to a low frequency noice appearing in the luminescence. Below critical temperature the new steady state results in the accumulation of 2DEG in one of the well.

M3 - Article in proceedings

BT - Proceedings of the 24th International Conference on The Physics of Semiconductors

PB - World Scientific

CY - Singapore

T2 - 24th International Conference on The Physics of Semiconductors

Y2 - 2 August 1998 through 7 August 1998

ER -

Timofeev VB, Larionov AV, Ioselevich AS, Zeman J, Martinez G, Falko VI et al. Interwell Radiative Recombination in the Presence of Random Potential Fluctuations in GaAs/AlGaAs Biased Double Quantum Wells. In Proceedings of the 24th International Conference on The Physics of Semiconductors. Singapore: World Scientific. 1999