The interwell luminescence (PL) of spatially separated e-h pairs exhibits systematic narrowing with temperature increase which are explained in terms of lateral thermo-activated tunneling of e-h pairs localized by random potential fluctuations (RPF). At critical temperatures the quasi-equilibrium of carriers, undergoes an abrupt transition. This occurs with significant redistribution of the electrical field inside the structure and give rise to a low frequency noice appearing in the luminescence. Below critical temperature the new steady state results in the accumulation of 2DEG in one of the well.
|Title of host publication||Proceedings of the 24th International Conference on The Physics of Semiconductors|
|Place of Publication||Singapore|
|Publication status||Published - 1999|
|Event||24th International Conference on The Physics of Semiconductors - Jerusalem, Israel|
Duration: 2 Aug 1998 → 7 Aug 1998
Conference number: 24
|Conference||24th International Conference on The Physics of Semiconductors|
|Period||02/08/1998 → 07/08/1998|
Timofeev, V. B., Larionov, A. V., Ioselevich, A. S., Zeman, J., Martinez, G., Falko, V. I., ... Sørensen, C. B. (1999). Interwell Radiative Recombination in the Presence of Random Potential Fluctuations in GaAs/AlGaAs Biased Double Quantum Wells. In Proceedings of the 24th International Conference on The Physics of Semiconductors Singapore: World Scientific.