Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography

F Ubaldi, G Pozzi, Takeshi Kasama, M R McCartney, S B Newcomb, Rafal E. Dunin-Borkowski

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    Off-axis electron holography has been used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope using focused ion beam milling. In reconstructed phase images, regions of silicon oxide that are located between metal contacts show unexpected elliptical phase contours centered several hundreds of nm from the specimen edge. The experimental images are compared with simulations performed using three-dimensional calculations of the electrostatic potential inside and outside the specimen, which take into account the mean inner potential of the specimen and the perturbed vacuum reference wave. The simulations suggest that the oxide layers contain a uniform volume density of positive charge and that the elliptical contours result from the combined effect of the electrostatic potential in the specimen and the external electrostatic fringing field.
    Original languageEnglish
    Book seriesJournal of Physics: Conference Series (Online)
    Volume209
    Issue number1
    Pages (from-to)012064
    ISSN1742-6596
    DOIs
    Publication statusPublished - 2010
    Event16th International Conference on Microscopy of Semiconducting Materials - University of Oxford, Oxford, United Kingdom
    Duration: 17 Mar 200920 Mar 2009
    Conference number: 16

    Conference

    Conference16th International Conference on Microscopy of Semiconducting Materials
    Number16
    LocationUniversity of Oxford
    CountryUnited Kingdom
    CityOxford
    Period17/03/200920/03/2009

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