Interlayer excitons in a bulk van der Waals semiconductor

Ashish Arora, Matthias Drueppel, Robert Schmidt, Thorsten Deilmann, Robert Schneider, Maciej R. Molas, Philipp Marauhn, Steffen Michaelis de Vasconcellos, Marek Potemski, Michael Rohlfing, Rudolf Bratschitsch

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Abstract

Bound electron-hole pairs called excitons govern the electronic and optical response of many organic and inorganic semiconductors. Excitons with spatially displaced wave functions of electrons and holes (interlayer excitons) are important for Bose-Einstein condensation, superfluidity, dissipationless current flow, and the light-induced exciton spin Hall effect. Here we report on the discovery of interlayer excitons in a bulk van der Waals semiconductor. They form due to strong localization and spin-valley coupling of charge carriers. By combining high-field magneto-reflectance experiments and ab initio calculations for 2H-MoTe2, we explain their salient features: the positive sign of the g-factor and the large diamagnetic shift. Our investigations solve the long-standing puzzle of positive g-factors in transition metal dichalcogenides, and pave the way for studying collective phenomena in these materials at elevated temperatures.
Original languageEnglish
Article number639
JournalNature Communications
Volume8
Number of pages6
ISSN2041-1723
DOIs
Publication statusPublished - 2017

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