Abstract
An accelerated L10 ordering process was observed in FePt thin films deposited directly on HF-cleaned Si substrates at low annealing temperatures as compared with those deposited on nature-oxidized Si substrates, which results from an interface reaction that forms PtSi between the FePt film and the Si substrate. The L10 ordered FePt thin films prepared after 360 °C annealing show a large coercivity of Hc = 8.9 kOe and an excellent stability against thermal annealing.
Original language | English |
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Journal | Scripta Materialia |
Volume | 57 |
Issue number | 2 |
Pages (from-to) | 77-80 |
Number of pages | 4 |
ISSN | 1359-6462 |
DOIs | |
Publication status | Published - 2007 |
Externally published | Yes |
Keywords
- FePt thin film
- Ordering
- Interface reaction
- Coercivity