We study the coherent formation of biexcitons in wet-etched ZnSe quantum wires of lateral sizes down to 23 nm by transient degenerate four-wave mixing. We observe an increase of the biexciton binding energy with decreasing wire width reaching 30% energy enhancement in the smallest wire structure compared to the mesa structure which is attributed to a quenching of the exciton-exciton scattering efficiency by density dependent measurements. The exciton dephasing is found to increase with decreasing wire width which is assigned to an enhanced repulsive exchange interaction between excitons of equal spin.
|Title of host publication||Proceedings of the 24th International Conference on The Physics of Semiconductors|
|Place of Publication||Singapore|
|Publication status||Published - 1999|
|Event||24th International Conference on The Physics of Semiconductors - Jerusalem, Israel|
Duration: 2 Aug 1998 → 7 Aug 1998
Conference number: 24
|Conference||24th International Conference on The Physics of Semiconductors|
|Period||02/08/1998 → 07/08/1998|
Wagner, H. P., Langbein, W., Hvam, J. M., Bacher, G., Kümmell, T., Forchel, A., & Gershoni, D. (1999). Interaction and Dephasing of Excitons in ZnSe Quantum Wires. In Proceedings of the 24th International Conference on The Physics of Semiconductors (pp. Th3-C5). World Scientific.