Interaction and Dephasing of Excitons in ZnSe Quantum Wires

Hans Peter Wagner, Wolfgang Langbein, Jørn Märcher Hvam, G. Bacher, T. Kümmell, A. Forchel, David Gershoni

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Abstract

We study the coherent formation of biexcitons in wet-etched ZnSe quantum wires of lateral sizes down to 23 nm by transient degenerate four-wave mixing. We observe an increase of the biexciton binding energy with decreasing wire width reaching 30% energy enhancement in the smallest wire structure compared to the mesa structure which is attributed to a quenching of the exciton-exciton scattering efficiency by density dependent measurements. The exciton dephasing is found to increase with decreasing wire width which is assigned to an enhanced repulsive exchange interaction between excitons of equal spin.
Original languageEnglish
Title of host publicationProceedings of the 24th International Conference on The Physics of Semiconductors
Place of PublicationSingapore
PublisherWorld Scientific
Publication date1999
PagesTh3-C5
Publication statusPublished - 1999
Event24th International Conference on The Physics of Semiconductors - Jerusalem, Israel
Duration: 2 Aug 19987 Aug 1998
Conference number: 24
http://physics.technion.ac.il/~icps24/

Conference

Conference24th International Conference on The Physics of Semiconductors
Number24
CountryIsrael
CityJerusalem
Period02/08/199807/08/1998
Internet address

Cite this

Wagner, H. P., Langbein, W., Hvam, J. M., Bacher, G., Kümmell, T., Forchel, A., & Gershoni, D. (1999). Interaction and Dephasing of Excitons in ZnSe Quantum Wires. In Proceedings of the 24th International Conference on The Physics of Semiconductors (pp. Th3-C5). World Scientific.