Abstract
| Original language | English |
|---|---|
| Journal | Chinese Physics Letters |
| Volume | 26 |
| Issue number | 5 |
| Pages (from-to) | 057304 |
| ISSN | 0256-307X |
| DOIs | |
| Publication status | Published - 2009 |
Cite this
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Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers. / Xu, Zhang-Cheng; Zhang, Ya-Ting; Hvam, Jørn Märcher; Horikoshi, Yoshiji.
In: Chinese Physics Letters, Vol. 26, No. 5, 2009, p. 057304.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers
AU - Xu, Zhang-Cheng
AU - Zhang, Ya-Ting
AU - Hvam, Jørn Märcher
AU - Horikoshi, Yoshiji
PY - 2009
Y1 - 2009
N2 - The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by considering the resonant F¨orster energy transfer between the wetting layer states at elevated temperatures.
AB - The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by considering the resonant F¨orster energy transfer between the wetting layer states at elevated temperatures.
U2 - 10.1088/0256-307X/26/5/057304
DO - 10.1088/0256-307X/26/5/057304
M3 - Journal article
VL - 26
SP - 057304
JO - Chinese Physics Letters
JF - Chinese Physics Letters
SN - 0256-307X
IS - 5
ER -