Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers

Zhang-Cheng Xu, Ya-Ting Zhang, Jørn Märcher Hvam, Yoshiji Horikoshi

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Abstract

The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by considering the resonant F¨orster energy transfer between the wetting layer states at elevated temperatures.
Original languageEnglish
JournalChinese Physics Letters
Volume26
Issue number5
Pages (from-to)057304
ISSN0256-307X
DOIs
Publication statusPublished - 2009

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