Abstract
The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is
studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence
of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by
considering the resonant F¨orster energy transfer between the wetting layer states at elevated temperatures.
Original language | English |
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Journal | Chinese Physics Letters |
Volume | 26 |
Issue number | 5 |
Pages (from-to) | 057304 |
ISSN | 0256-307X |
DOIs | |
Publication status | Published - 2009 |