Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers

Zhang-Cheng Xu; Ya-Ting Zhang; Jørn Märcher Hvam; Yoshiji Horikoshi

doi:10.1088/0256-307X/26/5/057304

Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers

Zhang-Cheng Xu, Ya-Ting Zhang, Jørn Märcher Hvam, Yoshiji Horikoshi

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Abstract

The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by considering the resonant F¨orster energy transfer between the wetting layer states at elevated temperatures.

Original language	English
Journal	Chinese Physics Letters
Volume	26
Issue number	5
Pages (from-to)	057304
ISSN	0256-307X
DOIs	https://doi.org/10.1088/0256-307X/26/5/057304
Publication status	Published - 2009

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title = "Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers",

abstract = "The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by considering the resonant F¨orster energy transfer between the wetting layer states at elevated temperatures.",

author = "Zhang-Cheng Xu and Ya-Ting Zhang and Hvam, {J{\o}rn M{\"a}rcher} and Yoshiji Horikoshi",

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journal = "Chinese Physics Letters",

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T1 - Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers

AU - Xu, Zhang-Cheng

AU - Zhang, Ya-Ting

AU - Hvam, Jørn Märcher

AU - Horikoshi, Yoshiji

PY - 2009

Y1 - 2009

N2 - The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by considering the resonant F¨orster energy transfer between the wetting layer states at elevated temperatures.

AB - The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which can be explained by considering the resonant F¨orster energy transfer between the wetting layer states at elevated temperatures.

U2 - 10.1088/0256-307X/26/5/057304

DO - 10.1088/0256-307X/26/5/057304

M3 - Journal article

VL - 26

SP - 057304

JO - Chinese Physics Letters

JF - Chinese Physics Letters

SN - 0256-307X

IS - 5

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