Integration of organic based Schottky junctions for crossbar non-volatile memory applications

E. Katsia, G. Tallarida, S. Ferrari, Eva Bundgaard, Roar Søndergaard, Frederik C Krebs

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylene-vinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organics without affecting material properties. Current-voltage characteristics were studied in order to investigate which of the tested compounds could possibly reach the requirements for non-volatile memory applications. All the investigated devices displayed good rectifying properties, ranging from 10(2) to 10(4). On the other hand, one of the compounds reveals higher conductivity and possible reasons for this behavior are discussed. (C) 2008 Elsevier B.V. All rights reserved.
    Original languageEnglish
    JournalMicroelectronic Engineering
    Volume85
    Issue number12
    Pages (from-to)2439-2441
    ISSN0167-9317
    DOIs
    Publication statusPublished - 2008
    EventMaterials and Emerging Technologies for Non-Volatile-Memory Devices, Symposium H at the EMRS 2008 Spring meeting - Strasbourg (FR), 26-30 May
    Duration: 1 Jan 2008 → …

    Conference

    ConferenceMaterials and Emerging Technologies for Non-Volatile-Memory Devices, Symposium H at the EMRS 2008 Spring meeting
    CityStrasbourg (FR), 26-30 May
    Period01/01/2008 → …

    Fingerprint Dive into the research topics of 'Integration of organic based Schottky junctions for crossbar non-volatile memory applications'. Together they form a unique fingerprint.

    Cite this