Integrated tunneling  sensor for nanoelectromechanical  systems

S. Sadewasser; G. Abadal; N. Barniol; Søren Dohn; Anja Boisen

doi:10.1063/1.2362593

Integrated tunneling sensor for nanoelectromechanical systems

S. Sadewasser, G. Abadal, N. Barniol, Søren Dohn, Anja Boisen

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Abstract

Transducers based on quantum mechanical tunneling provide an extremely sensitive sensor principle, especially for nanoelectromechanical systems. For proper operation a gap between the electrodes of below 1 nm is essential, requiring the use of structures with a mobile electrode. At such small distances, attractive van der Waals and capillary forces become sizable, possibly resulting in snap-in of the electrodes. The authors present a comprehensive analysis and evaluation of the interplay between the involved forces and identify requirements for the design of tunneling sensors. Based on this analysis, a tunneling sensor is fabricated by Si micromachining technology and its proper operation is demonstrated. (c) 2006 American Institute of Physics.

Original language	English
Article number	173101
Journal	Applied Physics Letters
Volume	89
Issue number	17
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.2362593
Publication status	Published - 2006

Bibliographical note

Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

ATOMIC-FORCE MICROSCOPY
FABRICATION
MASS DETECTION

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Cite this

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