Integrated tunneling sensor for nanoelectromechanical systems

S. Sadewasser, G. Abadal, N. Barniol, Søren Dohn, Anja Boisen

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    Transducers based on quantum mechanical tunneling provide an extremely sensitive sensor principle, especially for nanoelectromechanical systems. For proper operation a gap between the electrodes of below 1 nm is essential, requiring the use of structures with a mobile electrode. At such small distances, attractive van der Waals and capillary forces become sizable, possibly resulting in snap-in of the electrodes. The authors present a comprehensive analysis and evaluation of the interplay between the involved forces and identify requirements for the design of tunneling sensors. Based on this analysis, a tunneling sensor is fabricated by Si micromachining technology and its proper operation is demonstrated. (c) 2006 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Issue number17
    Pages (from-to)173101
    Publication statusPublished - 2006

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    Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.



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