InP DHBT technology for power amplifiers at mm-wave frequencies

Virginio Midili; V. Nodjiadjim; Tom Keinicke Johansen; Michele Squartecchia; M. Riet; J. Y. Dupuy; A. Konczykowska

doi:10.1016/j.mejo.2017.07.014

InP DHBT technology for power amplifiers at mm-wave frequencies

Virginio Midili, V. Nodjiadjim, Tom Keinicke Johansen, Michele Squartecchia, M. Riet, J. Y. Dupuy, A. Konczykowska

III-V Lab

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Abstract

An InP Double Heterojunction Bipolar Transistor (DHBT) technology is presented for millimeter-wave power amplifiers at E-band and higher frequencies. Single- and multi-finger transistors with 0.7 μm emitter width and emitter lengths of 5, 7, 10 μm are designed for high frequency and high power applications. The static and AC performances of the fabricated devices are discussed. Reported cutoff frequency and maximum oscillation frequency are ft=267 GHz and fmax=450 GHz for a 0.7×5 μmP2 single-finger device, respectively. Results from large-signal measurements at 30 GHz are reported for single and 4-finger devices. Ballasted devices are introduced to improve thermal behaviour and to increase the limits of the safe operating area (SOA). The SOA is improved approximately by 75% for 4-finger devices with 0.7×10 μm2 emitter. A fabricated monolithic microwave integrated circuit (MMIC) at E-band based on stacked InP DHBTs is presented and its performances reported to demonstrate the power capabilities of the technology. [All rights reserved Elsevier].

Original language	English
Journal	Microelectronics Journal
Volume	67
Pages (from-to)	111-19
ISSN	0959-8324
DOIs	https://doi.org/10.1016/j.mejo.2017.07.014
Publication status	Published - 2017

Keywords

InP DHBT
Ballasted transistors
E-band
Mm-wave
Multi-finger
Power amplifiers
SOA

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@article{d685f4517fcf43259edf2f47f3b4b2e2,

title = "InP DHBT technology for power amplifiers at mm-wave frequencies",

abstract = "An InP Double Heterojunction Bipolar Transistor (DHBT) technology is presented for millimeter-wave power amplifiers at E-band and higher frequencies. Single- and multi-finger transistors with 0.7 μm emitter width and emitter lengths of 5, 7, 10 μm are designed for high frequency and high power applications. The static and AC performances of the fabricated devices are discussed. Reported cutoff frequency and maximum oscillation frequency are ft=267 GHz and fmax=450 GHz for a 0.7×5 μmP2 single-finger device, respectively. Results from large-signal measurements at 30 GHz are reported for single and 4-finger devices. Ballasted devices are introduced to improve thermal behaviour and to increase the limits of the safe operating area (SOA). The SOA is improved approximately by 75% for 4-finger devices with 0.7×10 μm2 emitter. A fabricated monolithic microwave integrated circuit (MMIC) at E-band based on stacked InP DHBTs is presented and its performances reported to demonstrate the power capabilities of the technology. [All rights reserved Elsevier].",

keywords = "InP DHBT, Ballasted transistors, E-band, Mm-wave, Multi-finger, Power amplifiers, SOA",

author = "Virginio Midili and V. Nodjiadjim and Johansen, {Tom Keinicke} and Michele Squartecchia and M. Riet and Dupuy, {J. Y.} and A. Konczykowska",

year = "2017",

doi = "10.1016/j.mejo.2017.07.014",

language = "English",

volume = "67",

pages = "111--19",

journal = "Microelectronics Journal",

issn = "0959-8324",

publisher = "Elsevier",

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TY - JOUR

T1 - InP DHBT technology for power amplifiers at mm-wave frequencies

AU - Midili, Virginio

AU - Nodjiadjim, V.

AU - Johansen, Tom Keinicke

AU - Squartecchia, Michele

AU - Riet, M.

AU - Dupuy, J. Y.

AU - Konczykowska, A.

PY - 2017

Y1 - 2017

N2 - An InP Double Heterojunction Bipolar Transistor (DHBT) technology is presented for millimeter-wave power amplifiers at E-band and higher frequencies. Single- and multi-finger transistors with 0.7 μm emitter width and emitter lengths of 5, 7, 10 μm are designed for high frequency and high power applications. The static and AC performances of the fabricated devices are discussed. Reported cutoff frequency and maximum oscillation frequency are ft=267 GHz and fmax=450 GHz for a 0.7×5 μmP2 single-finger device, respectively. Results from large-signal measurements at 30 GHz are reported for single and 4-finger devices. Ballasted devices are introduced to improve thermal behaviour and to increase the limits of the safe operating area (SOA). The SOA is improved approximately by 75% for 4-finger devices with 0.7×10 μm2 emitter. A fabricated monolithic microwave integrated circuit (MMIC) at E-band based on stacked InP DHBTs is presented and its performances reported to demonstrate the power capabilities of the technology. [All rights reserved Elsevier].

AB - An InP Double Heterojunction Bipolar Transistor (DHBT) technology is presented for millimeter-wave power amplifiers at E-band and higher frequencies. Single- and multi-finger transistors with 0.7 μm emitter width and emitter lengths of 5, 7, 10 μm are designed for high frequency and high power applications. The static and AC performances of the fabricated devices are discussed. Reported cutoff frequency and maximum oscillation frequency are ft=267 GHz and fmax=450 GHz for a 0.7×5 μmP2 single-finger device, respectively. Results from large-signal measurements at 30 GHz are reported for single and 4-finger devices. Ballasted devices are introduced to improve thermal behaviour and to increase the limits of the safe operating area (SOA). The SOA is improved approximately by 75% for 4-finger devices with 0.7×10 μm2 emitter. A fabricated monolithic microwave integrated circuit (MMIC) at E-band based on stacked InP DHBTs is presented and its performances reported to demonstrate the power capabilities of the technology. [All rights reserved Elsevier].

KW - InP DHBT

KW - Ballasted transistors

KW - E-band

KW - Mm-wave

KW - Multi-finger

KW - Power amplifiers

KW - SOA

U2 - 10.1016/j.mejo.2017.07.014

DO - 10.1016/j.mejo.2017.07.014

M3 - Journal article

SN - 0959-8324

VL - 67

SP - 111

EP - 119

JO - Microelectronics Journal

JF - Microelectronics Journal

ER -

InP DHBT technology for power amplifiers at mm-wave frequencies

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Keywords

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