InP DHBT technology for power amplifiers at mm-wave frequencies

Virginio Midili, V. Nodjiadjim, Tom Keinicke Johansen, Michele Squartecchia, M. Riet, J. Y. Dupuy, A. Konczykowska

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Abstract

An InP Double Heterojunction Bipolar Transistor (DHBT) technology is presented for millimeter-wave power amplifiers at E-band and higher frequencies. Single- and multi-finger transistors with 0.7 μm emitter width and emitter lengths of 5, 7, 10 μm are designed for high frequency and high power applications. The static and AC performances of the fabricated devices are discussed. Reported cutoff frequency and maximum oscillation frequency are ft=267 GHz and fmax=450 GHz for a 0.7×5 μmP2 single-finger device, respectively. Results from large-signal measurements at 30 GHz are reported for single and 4-finger devices. Ballasted devices are introduced to improve thermal behaviour and to increase the limits of the safe operating area (SOA). The SOA is improved approximately by 75% for 4-finger devices with 0.7×10 μm2 emitter. A fabricated monolithic microwave integrated circuit (MMIC) at E-band based on stacked InP DHBTs is presented and its performances reported to demonstrate the power capabilities of the technology. [All rights reserved Elsevier].
Original languageEnglish
JournalMicroelectronics Journal
Volume67
Pages (from-to)111-19
ISSN0959-8324
DOIs
Publication statusPublished - 2017

Keywords

  • InP DHBT
  • Ballasted transistors
  • E-band
  • Mm-wave
  • Multi-finger
  • Power amplifiers
  • SOA

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