InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources

Tomas Kraemer, Ina Ostermay, Thomas Jensen, Tom Keinicke Johansen, Franz-Josef Schmueckle, Andreas Thies, Viktor Krozer, Wolfgang Heinrich, Olaf Krueger, Günther Traenkle, Marco Lisker, Andreas Trusch, Philip Kulse, Bernd Tillack

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly on top of the BiCMOS wafer enables ultra-broadband interconnects with <0.2 dB insertion loss from 0-100 GHz. The 0.8 × 5 μm2 InP DHBTs show fT/fmax of 400/350 GHz with an output power of more than 26 mW at 96 GHz. These are record values for a heterogeneously integrated transistor on silicon. As a circuit example, a 164-GHz signal source is presented. It features a voltage-controlled oscillator in BiCMOS, which drives a doubler-amplifier chain in InP DHBT technology.
Original languageEnglish
JournalI E E E Transactions on Electron Devices
Volume60
Issue number7
Pages (from-to)2209-2216
ISSN0018-9383
DOIs
Publication statusPublished - 2013

Keywords

  • BiCMOS integrated circuits
  • Double heterojunction bipolar transistors (DHBT)
  • Integrated circuit design
  • Millimeter wave circuits
  • Voltage-controlled oscillators (VCOs)

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