InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources

Tomas Kraemer; Ina Ostermay; Thomas Jensen; Tom Keinicke Johansen; Franz-Josef Schmueckle; Andreas Thies; Viktor Krozer; Wolfgang Heinrich; Olaf Krueger; Günther Traenkle; Marco Lisker; Andreas Trusch; Philip Kulse; Bernd Tillack

doi:10.1109/TED.2013.2264141

InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources

Tomas Kraemer, Ina Ostermay, Thomas Jensen, Tom Keinicke Johansen, Franz-Josef Schmueckle, Andreas Thies, Viktor Krozer, Wolfgang Heinrich, Olaf Krueger, Günther Traenkle, Marco Lisker, Andreas Trusch, Philip Kulse, Bernd Tillack

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Abstract

This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly on top of the BiCMOS wafer enables ultra-broadband interconnects with <0.2 dB insertion loss from 0-100 GHz. The 0.8 × 5 μm2 InP DHBTs show fT/fmax of 400/350 GHz with an output power of more than 26 mW at 96 GHz. These are record values for a heterogeneously integrated transistor on silicon. As a circuit example, a 164-GHz signal source is presented. It features a voltage-controlled oscillator in BiCMOS, which drives a doubler-amplifier chain in InP DHBT technology.

Original language	English
Journal	I E E E Transactions on Electron Devices
Volume	60
Issue number	7
Pages (from-to)	2209-2216
ISSN	0018-9383
DOIs	https://doi.org/10.1109/TED.2013.2264141
Publication status	Published - 2013

Keywords

BiCMOS integrated circuits
Double heterojunction bipolar transistors (DHBT)
Integrated circuit design
Millimeter wave circuits
Voltage-controlled oscillators (VCOs)

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10.1109/TED.2013.2264141

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Kraemer, T., Ostermay, I., Jensen, T., Johansen, T. K., Schmueckle, F.-J., Thies, A., Krozer, V., Heinrich, W., Krueger, O., Traenkle, G., Lisker, M., Trusch, A., Kulse, P., & Tillack, B. (2013). InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources. I E E E Transactions on Electron Devices, 60(7), 2209-2216. https://doi.org/10.1109/TED.2013.2264141

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title = "InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources",

abstract = "This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly on top of the BiCMOS wafer enables ultra-broadband interconnects with <0.2 dB insertion loss from 0-100 GHz. The 0.8 × 5 μm2 InP DHBTs show fT/fmax of 400/350 GHz with an output power of more than 26 mW at 96 GHz. These are record values for a heterogeneously integrated transistor on silicon. As a circuit example, a 164-GHz signal source is presented. It features a voltage-controlled oscillator in BiCMOS, which drives a doubler-amplifier chain in InP DHBT technology.",

keywords = "BiCMOS integrated circuits, Double heterojunction bipolar transistors (DHBT), Integrated circuit design, Millimeter wave circuits, Voltage-controlled oscillators (VCOs)",

author = "Tomas Kraemer and Ina Ostermay and Thomas Jensen and Johansen, {Tom Keinicke} and Franz-Josef Schmueckle and Andreas Thies and Viktor Krozer and Wolfgang Heinrich and Olaf Krueger and G{\"u}nther Traenkle and Marco Lisker and Andreas Trusch and Philip Kulse and Bernd Tillack",

year = "2013",

doi = "10.1109/TED.2013.2264141",

language = "English",

volume = "60",

pages = "2209--2216",

journal = "I E E E Transactions on Electron Devices",

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Kraemer, T, Ostermay, I, Jensen, T, Johansen, TK, Schmueckle, F-J, Thies, A, Krozer, V, Heinrich, W, Krueger, O, Traenkle, G, Lisker, M, Trusch, A, Kulse, P & Tillack, B 2013, 'InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources', I E E E Transactions on Electron Devices, vol. 60, no. 7, pp. 2209-2216. https://doi.org/10.1109/TED.2013.2264141

TY - JOUR

T1 - InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources

AU - Kraemer, Tomas

AU - Ostermay, Ina

AU - Jensen, Thomas

AU - Johansen, Tom Keinicke

AU - Schmueckle, Franz-Josef

AU - Thies, Andreas

AU - Krozer, Viktor

AU - Heinrich, Wolfgang

AU - Krueger, Olaf

AU - Traenkle, Günther

AU - Lisker, Marco

AU - Trusch, Andreas

AU - Kulse, Philip

AU - Tillack, Bernd

PY - 2013

Y1 - 2013

N2 - This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly on top of the BiCMOS wafer enables ultra-broadband interconnects with <0.2 dB insertion loss from 0-100 GHz. The 0.8 × 5 μm2 InP DHBTs show fT/fmax of 400/350 GHz with an output power of more than 26 mW at 96 GHz. These are record values for a heterogeneously integrated transistor on silicon. As a circuit example, a 164-GHz signal source is presented. It features a voltage-controlled oscillator in BiCMOS, which drives a doubler-amplifier chain in InP DHBT technology.

AB - This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly on top of the BiCMOS wafer enables ultra-broadband interconnects with <0.2 dB insertion loss from 0-100 GHz. The 0.8 × 5 μm2 InP DHBTs show fT/fmax of 400/350 GHz with an output power of more than 26 mW at 96 GHz. These are record values for a heterogeneously integrated transistor on silicon. As a circuit example, a 164-GHz signal source is presented. It features a voltage-controlled oscillator in BiCMOS, which drives a doubler-amplifier chain in InP DHBT technology.

KW - BiCMOS integrated circuits

KW - Double heterojunction bipolar transistors (DHBT)

KW - Integrated circuit design

KW - Millimeter wave circuits

KW - Voltage-controlled oscillators (VCOs)

U2 - 10.1109/TED.2013.2264141

DO - 10.1109/TED.2013.2264141

M3 - Journal article

SN - 0018-9383

VL - 60

SP - 2209

EP - 2216

JO - I E E E Transactions on Electron Devices

JF - I E E E Transactions on Electron Devices

IS - 7

ER -

InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources

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