InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers

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A novel millimeter-wave ballasted stacked-transistor configuration implemented on a 0.7 μm InP double heterojunction bipolar transistor (DHBT) process is proposed in this paper. A ballasting resistive network connected to the emitter leads of the common-base stage proves to be very effective in extending the safe operating area (SOA) of a unit power cell. Electromagnetic-circuit co-simulations based on a DHBT large-signal model including thermal effects show a significant increase of the attainable voltage swing under RF operation. Experimental results at E-band obtained from a two-stage monolithic microwave integrated circuit (MMIC) power amplifier validate the analysis and design. A small-signal gain of 13.9 dB at 71 GHz and an output power higher than 17.3dBm at 75 GHz have been observed experimentally on the fabricated MMIC.
Original languageEnglish
Title of host publicationProceedings of the 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018)
Number of pages3
PublisherIEEE
Publication date2019
ISBN (Electronic)978-1-5386-7333-1
DOIs
Publication statusPublished - 2019
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Power amplifier, Indium phosphide, Double heterojunction bipolar transistor (DHBT), Stacked-transistor, Emitter-ballasting

ID: 176480745