InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers

Michele Squartecchia; Tom Keinicke Johansen; Virginio Midili; Jean-Yves Dupuy; Virginie Nodjiadjim; Muriel Riet; Agnieszka Konczykowska

doi:10.1109/LAMC.2018.8699026

InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers

Michele Squartecchia, Tom Keinicke Johansen, Virginio Midili, Jean-Yves Dupuy, Virginie Nodjiadjim, Muriel Riet, Agnieszka Konczykowska

III-V Lab

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

A novel millimeter-wave ballasted stacked-transistor configuration implemented on a 0.7 μm InP double heterojunction bipolar transistor (DHBT) process is proposed in this paper. A ballasting resistive network connected to the emitter leads of the common-base stage proves to be very effective in extending the safe operating area (SOA) of a unit power cell. Electromagnetic-circuit co-simulations based on a DHBT large-signal model including thermal effects show a significant increase of the attainable voltage swing under RF operation. Experimental results at E-band obtained from a two-stage monolithic microwave integrated circuit (MMIC) power amplifier validate the analysis and design. A small-signal gain of 13.9 dB at 71 GHz and an output power higher than 17.3dBm at 75 GHz have been observed experimentally on the fabricated MMIC.

Original language	English
Title of host publication	Proceedings of the 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018)
Number of pages	3
Publisher	IEEE
Publication date	2019
ISBN (Electronic)	978-1-5386-7333-1
DOIs	https://doi.org/10.1109/LAMC.2018.8699026
Publication status	Published - 2019

Keywords

Power amplifier
Indium phosphide
Double heterojunction bipolar transistor (DHBT)
Stacked-transistor
Emitter-ballasting

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10.1109/LAMC.2018.8699026

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@inproceedings{6c4ce9d80fbc40e382b537c751044a10,

title = "InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers",

abstract = "A novel millimeter-wave ballasted stacked-transistor configuration implemented on a 0.7 μm InP double heterojunction bipolar transistor (DHBT) process is proposed in this paper. A ballasting resistive network connected to the emitter leads of the common-base stage proves to be very effective in extending the safe operating area (SOA) of a unit power cell. Electromagnetic-circuit co-simulations based on a DHBT large-signal model including thermal effects show a significant increase of the attainable voltage swing under RF operation. Experimental results at E-band obtained from a two-stage monolithic microwave integrated circuit (MMIC) power amplifier validate the analysis and design. A small-signal gain of 13.9 dB at 71 GHz and an output power higher than 17.3dBm at 75 GHz have been observed experimentally on the fabricated MMIC.",

keywords = "Power amplifier, Indium phosphide, Double heterojunction bipolar transistor (DHBT), Stacked-transistor, Emitter-ballasting",

author = "Michele Squartecchia and Johansen, {Tom Keinicke} and Virginio Midili and Jean-Yves Dupuy and Virginie Nodjiadjim and Muriel Riet and Agnieszka Konczykowska",

year = "2019",

doi = "10.1109/LAMC.2018.8699026",

language = "English",

booktitle = "Proceedings of the 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018)",

publisher = "IEEE",

address = "United States",

}

TY - GEN

T1 - InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers

AU - Squartecchia, Michele

AU - Johansen, Tom Keinicke

AU - Midili, Virginio

AU - Dupuy, Jean-Yves

AU - Nodjiadjim, Virginie

AU - Riet, Muriel

AU - Konczykowska, Agnieszka

PY - 2019

Y1 - 2019

N2 - A novel millimeter-wave ballasted stacked-transistor configuration implemented on a 0.7 μm InP double heterojunction bipolar transistor (DHBT) process is proposed in this paper. A ballasting resistive network connected to the emitter leads of the common-base stage proves to be very effective in extending the safe operating area (SOA) of a unit power cell. Electromagnetic-circuit co-simulations based on a DHBT large-signal model including thermal effects show a significant increase of the attainable voltage swing under RF operation. Experimental results at E-band obtained from a two-stage monolithic microwave integrated circuit (MMIC) power amplifier validate the analysis and design. A small-signal gain of 13.9 dB at 71 GHz and an output power higher than 17.3dBm at 75 GHz have been observed experimentally on the fabricated MMIC.

AB - A novel millimeter-wave ballasted stacked-transistor configuration implemented on a 0.7 μm InP double heterojunction bipolar transistor (DHBT) process is proposed in this paper. A ballasting resistive network connected to the emitter leads of the common-base stage proves to be very effective in extending the safe operating area (SOA) of a unit power cell. Electromagnetic-circuit co-simulations based on a DHBT large-signal model including thermal effects show a significant increase of the attainable voltage swing under RF operation. Experimental results at E-band obtained from a two-stage monolithic microwave integrated circuit (MMIC) power amplifier validate the analysis and design. A small-signal gain of 13.9 dB at 71 GHz and an output power higher than 17.3dBm at 75 GHz have been observed experimentally on the fabricated MMIC.

KW - Power amplifier

KW - Indium phosphide

KW - Double heterojunction bipolar transistor (DHBT)

KW - Stacked-transistor

KW - Emitter-ballasting

U2 - 10.1109/LAMC.2018.8699026

DO - 10.1109/LAMC.2018.8699026

M3 - Article in proceedings

BT - Proceedings of the 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018)

PB - IEEE

ER -

InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers

Abstract

Keywords

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