InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers

Michele Squartecchia, Tom Keinicke Johansen, Virginio Midili, Jean-Yves Dupuy, Virginie Nodjiadjim, Muriel Riet, Agnieszka Konczykowska

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

A novel millimeter-wave ballasted stacked-transistor configuration implemented on a 0.7 μm InP double heterojunction bipolar transistor (DHBT) process is proposed in this paper. A ballasting resistive network connected to the emitter leads of the common-base stage proves to be very effective in extending the safe operating area (SOA) of a unit power cell. Electromagnetic-circuit co-simulations based on a DHBT large-signal model including thermal effects show a significant increase of the attainable voltage swing under RF operation. Experimental results at E-band obtained from a two-stage monolithic microwave integrated circuit (MMIC) power amplifier validate the analysis and design. A small-signal gain of 13.9 dB at 71 GHz and an output power higher than 17.3dBm at 75 GHz have been observed experimentally on the fabricated MMIC.
Original languageEnglish
Title of host publicationProceedings of the 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018)
Number of pages3
PublisherIEEE
Publication date2019
ISBN (Electronic)978-1-5386-7333-1
DOIs
Publication statusPublished - 2019

Keywords

  • Power amplifier
  • Indium phosphide
  • Double heterojunction bipolar transistor (DHBT)
  • Stacked-transistor
  • Emitter-ballasting

Cite this

Squartecchia, M., Johansen, T. K., Midili, V., Dupuy, J-Y., Nodjiadjim, V., Riet, M., & Konczykowska, A. (2019). InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers. In Proceedings of the 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018) IEEE. https://doi.org/10.1109/LAMC.2018.8699026
Squartecchia, Michele ; Johansen, Tom Keinicke ; Midili, Virginio ; Dupuy, Jean-Yves ; Nodjiadjim, Virginie ; Riet, Muriel ; Konczykowska, Agnieszka. / InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers. Proceedings of the 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018). IEEE, 2019.
@inproceedings{6c4ce9d80fbc40e382b537c751044a10,
title = "InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers",
abstract = "A novel millimeter-wave ballasted stacked-transistor configuration implemented on a 0.7 μm InP double heterojunction bipolar transistor (DHBT) process is proposed in this paper. A ballasting resistive network connected to the emitter leads of the common-base stage proves to be very effective in extending the safe operating area (SOA) of a unit power cell. Electromagnetic-circuit co-simulations based on a DHBT large-signal model including thermal effects show a significant increase of the attainable voltage swing under RF operation. Experimental results at E-band obtained from a two-stage monolithic microwave integrated circuit (MMIC) power amplifier validate the analysis and design. A small-signal gain of 13.9 dB at 71 GHz and an output power higher than 17.3dBm at 75 GHz have been observed experimentally on the fabricated MMIC.",
keywords = "Power amplifier, Indium phosphide, Double heterojunction bipolar transistor (DHBT), Stacked-transistor, Emitter-ballasting",
author = "Michele Squartecchia and Johansen, {Tom Keinicke} and Virginio Midili and Jean-Yves Dupuy and Virginie Nodjiadjim and Muriel Riet and Agnieszka Konczykowska",
year = "2019",
doi = "10.1109/LAMC.2018.8699026",
language = "English",
booktitle = "Proceedings of the 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018)",
publisher = "IEEE",
address = "United States",

}

Squartecchia, M, Johansen, TK, Midili, V, Dupuy, J-Y, Nodjiadjim, V, Riet, M & Konczykowska, A 2019, InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers. in Proceedings of the 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018). IEEE. https://doi.org/10.1109/LAMC.2018.8699026

InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers. / Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio; Dupuy, Jean-Yves; Nodjiadjim, Virginie; Riet, Muriel; Konczykowska, Agnieszka.

Proceedings of the 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018). IEEE, 2019.

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

TY - GEN

T1 - InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers

AU - Squartecchia, Michele

AU - Johansen, Tom Keinicke

AU - Midili, Virginio

AU - Dupuy, Jean-Yves

AU - Nodjiadjim, Virginie

AU - Riet, Muriel

AU - Konczykowska, Agnieszka

PY - 2019

Y1 - 2019

N2 - A novel millimeter-wave ballasted stacked-transistor configuration implemented on a 0.7 μm InP double heterojunction bipolar transistor (DHBT) process is proposed in this paper. A ballasting resistive network connected to the emitter leads of the common-base stage proves to be very effective in extending the safe operating area (SOA) of a unit power cell. Electromagnetic-circuit co-simulations based on a DHBT large-signal model including thermal effects show a significant increase of the attainable voltage swing under RF operation. Experimental results at E-band obtained from a two-stage monolithic microwave integrated circuit (MMIC) power amplifier validate the analysis and design. A small-signal gain of 13.9 dB at 71 GHz and an output power higher than 17.3dBm at 75 GHz have been observed experimentally on the fabricated MMIC.

AB - A novel millimeter-wave ballasted stacked-transistor configuration implemented on a 0.7 μm InP double heterojunction bipolar transistor (DHBT) process is proposed in this paper. A ballasting resistive network connected to the emitter leads of the common-base stage proves to be very effective in extending the safe operating area (SOA) of a unit power cell. Electromagnetic-circuit co-simulations based on a DHBT large-signal model including thermal effects show a significant increase of the attainable voltage swing under RF operation. Experimental results at E-band obtained from a two-stage monolithic microwave integrated circuit (MMIC) power amplifier validate the analysis and design. A small-signal gain of 13.9 dB at 71 GHz and an output power higher than 17.3dBm at 75 GHz have been observed experimentally on the fabricated MMIC.

KW - Power amplifier

KW - Indium phosphide

KW - Double heterojunction bipolar transistor (DHBT)

KW - Stacked-transistor

KW - Emitter-ballasting

U2 - 10.1109/LAMC.2018.8699026

DO - 10.1109/LAMC.2018.8699026

M3 - Article in proceedings

BT - Proceedings of the 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018)

PB - IEEE

ER -

Squartecchia M, Johansen TK, Midili V, Dupuy J-Y, Nodjiadjim V, Riet M et al. InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers. In Proceedings of the 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018). IEEE. 2019 https://doi.org/10.1109/LAMC.2018.8699026