InP based lasers and optical amplifiers with wire-/dot-like active regions

J. P. Reithmaier, A. Somers, S. Deubert, R. Schwertberger, W. Kaiser, A. Forchel, M. Calligaro, P. Resneau, O. Parillaud, S. Bansropun, M. Krakowski, R. Alizon, D. Hadass, A. Bilenca, H. Dery, V. Mikhelashvili, G. Eisenstein, M. Gioannini, I. Montrosset, Tommy Winther BergMike van der Poel, Jesper Mørk, Bjarne Tromborg

Research output: Contribution to journalJournal articleResearchpeer-review


Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be discussed while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties as well as fundamental material and device modeling.
Original languageEnglish
JournalJournal of Physics D
Issue number13
Pages (from-to)2088-2102
Publication statusPublished - 2005


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