InP based lasers and optical amplifiers with wire-/dot-like active regions

J. P. Reithmaier, A. Somers, S. Deubert, R. Schwertberger, W. Kaiser, A. Forchel, M. Calligaro, P. Resneau, O. Parillaud, S. Bansropun, M. Krakowski, R. Alizon, D. Hadass, A. Bilenca, H. Dery, V. Mikhelashvili, G. Eisenstein, M. Gioannini, I. Montrosset, Tommy Winther BergMike van der Poel, Jesper Mørk, Bjarne Tromborg

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Abstract

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be discussed while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties as well as fundamental material and device modeling.
Original languageEnglish
JournalJournal of Physics D
Volume38
Issue number13
Pages (from-to)2088-2102
ISSN0022-3727
Publication statusPublished - 2005

Cite this

Reithmaier, J. P., Somers, A., Deubert, S., Schwertberger, R., Kaiser, W., Forchel, A., Calligaro, M., Resneau, P., Parillaud, O., Bansropun, S., Krakowski, M., Alizon, R., Hadass, D., Bilenca, A., Dery, H., Mikhelashvili, V., Eisenstein, G., Gioannini, M., Montrosset, I., ... Tromborg, B. (2005). InP based lasers and optical amplifiers with wire-/dot-like active regions. Journal of Physics D, 38(13), 2088-2102. http://ej.iop.org.globalproxy.cvt.dk:2048/links/q93/jJUY4WWhMMV3Az,7YBVIAw/d5_13_004.pdf