Initial stage of oxidation process and microstructure analysis of HfB2–20 vol.% SiC composite at 1500°C

De Wei Ni, Guo-Jun Zhang, Fang-Fang Xu, Wei-Ming Guo

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The initial stage of oxidation process of HfB2–20 vol.% SiC composite at 1500°C in air was investigated. With no holding, the oxide scale is composed of a discontinuous SiO2-rich glass layer and an imperfect SiC-depleted layer. Detailed analysis showed that the imperfect SiC-depleted layer contained an HfB2 matrix with partially oxidized HfB2 and SiC particles enclosed in graphite, which revealed that the formation of the SiC-depleted layer during oxidation resulted from the active oxidation of SiC with C as an initial product.
Original languageEnglish
JournalScripta Materialia
Volume64
Issue number7
Pages (from-to)617-620
ISSN1359-6462
DOIs
Publication statusPublished - 2011
Externally publishedYes

Keywords

  • HfB2–SiC
  • Oxidation
  • Microstructure
  • Transmission electron microscope

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