InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

Research output: Contribution to journalJournal article – Annual report year: 2018Researchpeer-review

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InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer. / Lin, Li; Ou, Yiyu; Zhu, Xiaolong; Stamate, Eugen; Wu, Kaiyu; Liang, Meng; Liu, Zhiqiang; Yi, Xiaoyan; Herstrøm, Berit; Boisen, Anja; Jensen, Flemming; Ou, Haiyan.

In: Optical Materials Express, Vol. 8, No. 7, 2018, p. 1818-1826.

Research output: Contribution to journalJournal article – Annual report year: 2018Researchpeer-review

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@article{7d26a81f4ee64cbc9543237e44d60544,
title = "InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer",
abstract = "We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40{\%} larger series resistance. Furthermore, a 95{\%} EL enhancement was achieved by the employment of the SLG interlayer.",
author = "Li Lin and Yiyu Ou and Xiaolong Zhu and Eugen Stamate and Kaiyu Wu and Meng Liang and Zhiqiang Liu and Xiaoyan Yi and Berit Herstr{\o}m and Anja Boisen and Flemming Jensen and Haiyan Ou",
year = "2018",
doi = "10.1364/OME.8.001818",
language = "English",
volume = "8",
pages = "1818--1826",
journal = "Optical Materials Express",
issn = "2159-3930",
publisher = "Optical Society of America",
number = "7",

}

RIS

TY - JOUR

T1 - InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

AU - Lin, Li

AU - Ou, Yiyu

AU - Zhu, Xiaolong

AU - Stamate, Eugen

AU - Wu, Kaiyu

AU - Liang, Meng

AU - Liu, Zhiqiang

AU - Yi, Xiaoyan

AU - Herstrøm, Berit

AU - Boisen, Anja

AU - Jensen, Flemming

AU - Ou, Haiyan

PY - 2018

Y1 - 2018

N2 - We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.

AB - We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.

U2 - 10.1364/OME.8.001818

DO - 10.1364/OME.8.001818

M3 - Journal article

VL - 8

SP - 1818

EP - 1826

JO - Optical Materials Express

JF - Optical Materials Express

SN - 2159-3930

IS - 7

ER -