InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

Li Lin; Yiyu Ou; Xiaolong Zhu; Eugen Stamate; Kaiyu Wu; Meng Liang; Zhiqiang Liu; Xiaoyan Yi; Berit Herstrøm; Anja Boisen; Flemming Jensen; Haiyan Ou

doi:10.1364/OME.8.001818

InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

Li Lin, Yiyu Ou, Xiaolong Zhu, Eugen Stamate, Kaiyu Wu, Meng Liang, Zhiqiang Liu, Xiaoyan Yi, Berit Herstrøm, Anja Boisen, Flemming Jensen, Haiyan Ou^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.

Original language	English
Journal	Optical Materials Express
Volume	8
Issue number	7
Pages (from-to)	1818-1826
ISSN	2159-3930
DOIs	https://doi.org/10.1364/OME.8.001818
Publication status	Published - 2018

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@article{7d26a81f4ee64cbc9543237e44d60544,

title = "InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer",

abstract = "We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer. ",

author = "Li Lin and Yiyu Ou and Xiaolong Zhu and Eugen Stamate and Kaiyu Wu and Meng Liang and Zhiqiang Liu and Xiaoyan Yi and Berit Herstr{\o}m and Anja Boisen and Flemming Jensen and Haiyan Ou",

year = "2018",

doi = "10.1364/OME.8.001818",

language = "English",

volume = "8",

pages = "1818--1826",

journal = "Optical Materials Express",

issn = "2159-3930",

publisher = "Optical Society of America",

number = "7",

}

InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer. / Lin, Li; Ou, Yiyu; Zhu, Xiaolong; Stamate, Eugen; Wu, Kaiyu; Liang, Meng; Liu, Zhiqiang; Yi, Xiaoyan; Herstrøm, Berit ; Boisen, Anja ; Jensen, Flemming ; Ou, Haiyan.

In: Optical Materials Express, Vol. 8, No. 7, 2018, p. 1818-1826.

Research output: Contribution to journal › Journal article › Research › peer-review

TY - JOUR

T1 - InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

AU - Lin, Li

AU - Ou, Yiyu

AU - Zhu, Xiaolong

AU - Stamate, Eugen

AU - Wu, Kaiyu

AU - Liang, Meng

AU - Liu, Zhiqiang

AU - Yi, Xiaoyan

AU - Herstrøm, Berit

AU - Boisen, Anja

AU - Jensen, Flemming

AU - Ou, Haiyan

PY - 2018

Y1 - 2018

N2 - We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.

AB - We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.

U2 - 10.1364/OME.8.001818

DO - 10.1364/OME.8.001818

M3 - Journal article

VL - 8

SP - 1818

EP - 1826

JO - Optical Materials Express

JF - Optical Materials Express

SN - 2159-3930

IS - 7

ER -

InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer

Abstract

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