Abstract
| Original language | English |
|---|---|
| Journal | Optical Materials Express |
| Volume | 8 |
| Issue number | 7 |
| Pages (from-to) | 1818-1826 |
| ISSN | 2159-3930 |
| DOIs | |
| Publication status | Published - 2018 |
Cite this
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InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer. / Lin, Li; Ou, Yiyu; Zhu, Xiaolong; Stamate, Eugen; Wu, Kaiyu; Liang, Meng; Liu, Zhiqiang; Yi, Xiaoyan; Herstrøm, Berit; Boisen, Anja; Jensen, Flemming; Ou, Haiyan.
In: Optical Materials Express, Vol. 8, No. 7, 2018, p. 1818-1826.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer
AU - Lin, Li
AU - Ou, Yiyu
AU - Zhu, Xiaolong
AU - Stamate, Eugen
AU - Wu, Kaiyu
AU - Liang, Meng
AU - Liu, Zhiqiang
AU - Yi, Xiaoyan
AU - Herstrøm, Berit
AU - Boisen, Anja
AU - Jensen, Flemming
AU - Ou, Haiyan
PY - 2018
Y1 - 2018
N2 - We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.
AB - We report an approach of using an interlayer of single layer graphene (SLG) for electroluminescence (EL) enhancement of an InGaN/GaN-based near-ultraviolet (NUV) light-emitting diode (LED) with an aluminum-doped zinc oxide (AZO)-based current spreading layer (CSL). AZO-based CSLs with and without a SLG interlayer were fabricated on the NUV LED epi-wafers. The current-voltage (I-V) characteristic and the EL intensity were measured and compared. We find that the LED without the SLG interlayer can possess a 40% larger series resistance. Furthermore, a 95% EL enhancement was achieved by the employment of the SLG interlayer.
U2 - 10.1364/OME.8.001818
DO - 10.1364/OME.8.001818
M3 - Journal article
VL - 8
SP - 1818
EP - 1826
JO - Optical Materials Express
JF - Optical Materials Express
SN - 2159-3930
IS - 7
ER -