InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

Zhangcheng Xu; K. Leosson; Dan Birkedal; V. Lyssenko; Jørn Märcher Hvam; J. Sadowski

InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

Zhangcheng Xu, K. Leosson, Dan Birkedal, V. Lyssenko, Jørn Märcher Hvam, J. Sadowski

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Abstract

Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour of the peak energy of PL band of the SML QD ensemble are observed and attributed to thermally activated carrier transfer between QDs via QW states.

Original language	English
Journal	Nanotechnology
Volume	14
Issue number	12
Pages (from-to)	1259-1261
ISSN	0957-4484
Publication status	Published - 2003

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title = "InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition",

abstract = "Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour of the peak energy of PL band of the SML QD ensemble are observed and attributed to thermally activated carrier transfer between QDs via QW states.",

author = "Zhangcheng Xu and K. Leosson and Dan Birkedal and V. Lyssenko and Hvam, {J{\o}rn M{\"a}rcher} and J. Sadowski",

year = "2003",

language = "English",

volume = "14",

pages = "1259--1261",

journal = "Nanotechnology",

issn = "0957-4484",

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number = "12",

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TY - JOUR

T1 - InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

AU - Xu, Zhangcheng

AU - Leosson, K.

AU - Birkedal, Dan

AU - Lyssenko, V.

AU - Hvam, Jørn Märcher

AU - Sadowski, J.

PY - 2003

Y1 - 2003

N2 - Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour of the peak energy of PL band of the SML QD ensemble are observed and attributed to thermally activated carrier transfer between QDs via QW states.

AB - Discrete emission lines from self-assembled InGaAs quantum dots (QDs) grown in the submonolayer (SML) deposition mode have been observed in micro-photoluminescence (PL) spectra at 10 K. For the first time, the SML-grown InGaAs/GaAs QD heterostructure is verified to be a quantum-dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour of the peak energy of PL band of the SML QD ensemble are observed and attributed to thermally activated carrier transfer between QDs via QW states.

M3 - Journal article

SN - 0957-4484

VL - 14

SP - 1259

EP - 1261

JO - Nanotechnology

JF - Nanotechnology

IS - 12

ER -