Abstract
The inability of the standard bulk one-sided step model to explain experimental phase contrast transmission electron microscopy (TEM) images of reverse-biased p-n junctions has prompted us to consider more realistic models that take into account hitherto ignored effects, like the influence of surface states and the presence of charges in the oxide layers due to the electron beam. The simulated field distributions as well as their influence on the interpretation of TEM images are presented and discussed.
| Original language | English |
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| Journal | Institute of Physics Conference Series |
| Volume | 169 |
| Pages (from-to) | 427-430 |
| Number of pages | 4 |
| ISSN | 0305-2346 |
| Publication status | Published - 2001 |
| Externally published | Yes |
| Event | Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials - Oxford, United Kingdom Duration: 25 Mar 2001 → 29 Mar 2001 |
Conference
| Conference | Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials |
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| Country/Territory | United Kingdom |
| City | Oxford |
| Period | 25/03/2001 → 29/03/2001 |