Influence of the specimen surfaces on TEM images of reverse-biased p-n junctions

Marco Beleggia, P. F. Fazzini, P. G. Merli, G. Pozzi

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

The inability of the standard bulk one-sided step model to explain experimental phase contrast transmission electron microscopy (TEM) images of reverse-biased p-n junctions has prompted us to consider more realistic models that take into account hitherto ignored effects, like the influence of surface states and the presence of charges in the oxide layers due to the electron beam. The simulated field distributions as well as their influence on the interpretation of TEM images are presented and discussed.
Original languageEnglish
JournalInstitute of Physics Conference Series
Volume169
Pages (from-to)427-430
Number of pages4
ISSN0305-2346
Publication statusPublished - 2001
Externally publishedYes
EventRoyal-Microscopical-Society Conference on Microscopy of Semiconducting Materials - Oxford, United Kingdom
Duration: 25 Mar 200129 Mar 2001

Conference

ConferenceRoyal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
CountryUnited Kingdom
CityOxford
Period25/03/200129/03/2001

Cite this