Vlijanie dizajna geterostruktury na porog generacii lazera s mnozhestvennymi kvantovymi jamami InGaN/GaN na kremnii

Translated title of the contribution: Influence of the heterostructure design on the lasing threshold of the multiple quantum wells laser on silicon

Andrei Andryieuski

Research output: Contribution to journalJournal articleResearchpeer-review

46 Downloads (Pure)

Abstract

This article is devoted to the investigation of the influence of heterostructure design on lasing characteristics of the InGaN/GaN multiple quantum well laser on silicon substrate, performed by computer modelling. It is shown that heterogeneity in a growth process can lead to different far-field patterns, that is related to the alteration of lasing threshold for different modes. It is shown that lasing threshold be reduced by variation of the layer thickness.
Translated title of the contributionInfluence of the heterostructure design on the lasing threshold of the multiple quantum wells laser on silicon
Original languageRussian
JournalVestnik
Volume1
Pages (from-to)45-48
ISSN0321-0367
Publication statusPublished - 2008

Fingerprint Dive into the research topics of 'Influence of the heterostructure design on the lasing threshold of the multiple quantum wells laser on silicon'. Together they form a unique fingerprint.

Cite this