This article is devoted to the investigation of the influence of heterostructure design on lasing characteristics of the InGaN/GaN multiple quantum well laser on silicon substrate, performed by computer modelling. It is shown that heterogeneity in a growth process can lead to different far-field patterns, that is related to the alteration of lasing threshold for different modes. It is shown that lasing threshold be reduced by variation of the layer thickness.
|Translated title of the contribution||Influence of the heterostructure design on the lasing threshold of the multiple quantum wells laser on silicon|
|Publication status||Published - 2008|