Influence of Quadrupole and Octupole Electron-Phonon Coupling on the Low-Field Transport Properties of n-type Silicon

N. O. Gram, Mogens Hoffmann Jørgensen

Research output: Contribution to journalJournal articleResearchpeer-review

124 Downloads (Pure)

Abstract

Comparison of low-field mobility and piezoresistance data with calculations gives support to the importance of quadrupole and octupole electron-phonon interactions in n-type silicon.
Original languageEnglish
JournalPhysical Review B
Volume8
Issue number8
Pages (from-to)3902-3907
ISSN2469-9950
DOIs
Publication statusPublished - 1973

Bibliographical note

Copyright (1973) by the American Physical Society.

Cite this

@article{11a25d17147347feafea7e9ae3e5b77f,
title = "Influence of Quadrupole and Octupole Electron-Phonon Coupling on the Low-Field Transport Properties of n-type Silicon",
abstract = "Comparison of low-field mobility and piezoresistance data with calculations gives support to the importance of quadrupole and octupole electron-phonon interactions in n-type silicon.",
author = "Gram, {N. O.} and J{\o}rgensen, {Mogens Hoffmann}",
note = "Copyright (1973) by the American Physical Society.",
year = "1973",
doi = "10.1103/PhysRevB.8.3902",
language = "English",
volume = "8",
pages = "3902--3907",
journal = "Physical Review B (Condensed Matter and Materials Physics)",
issn = "1098-0121",
publisher = "American Physical Society",
number = "8",

}

Influence of Quadrupole and Octupole Electron-Phonon Coupling on the Low-Field Transport Properties of n-type Silicon. / Gram, N. O.; Jørgensen, Mogens Hoffmann.

In: Physical Review B, Vol. 8, No. 8, 1973, p. 3902-3907.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Influence of Quadrupole and Octupole Electron-Phonon Coupling on the Low-Field Transport Properties of n-type Silicon

AU - Gram, N. O.

AU - Jørgensen, Mogens Hoffmann

N1 - Copyright (1973) by the American Physical Society.

PY - 1973

Y1 - 1973

N2 - Comparison of low-field mobility and piezoresistance data with calculations gives support to the importance of quadrupole and octupole electron-phonon interactions in n-type silicon.

AB - Comparison of low-field mobility and piezoresistance data with calculations gives support to the importance of quadrupole and octupole electron-phonon interactions in n-type silicon.

U2 - 10.1103/PhysRevB.8.3902

DO - 10.1103/PhysRevB.8.3902

M3 - Journal article

VL - 8

SP - 3902

EP - 3907

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 1098-0121

IS - 8

ER -