Influence of Quadrupole and Octupole Electron-Phonon Coupling on the Low-Field Transport Properties of n-type Silicon

N. O. Gram, Mogens Hoffmann Jørgensen

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Abstract

Comparison of low-field mobility and piezoresistance data with calculations gives support to the importance of quadrupole and octupole electron-phonon interactions in n-type silicon.
Original languageEnglish
JournalPhysical Review B
Volume8
Issue number8
Pages (from-to)3902-3907
ISSN2469-9950
DOIs
Publication statusPublished - 1973

Bibliographical note

Copyright (1973) by the American Physical Society.

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