Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence

Research output: Contribution to journalJournal article – Annual report year: 2016Researchpeer-review

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We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag
nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed.Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the
emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.
Original languageEnglish
JournalJournal of Luminescence
Volume175
Pages (from-to)213–216
ISSN0022-2313
DOIs
Publication statusPublished - 2016
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • GaN LED, Quantum-wells, Photoluminescence, Surface plasmons, Nanoparticles

ID: 123099746