Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence

Ahmed Fadil; Daisuke Iida; Yuntian Chen; Yiyu Ou; Satoshi Kamiyama; Haiyan Ou

doi:10.1016/j.jlumin.2016.03.001

Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence

Ahmed Fadil
, Daisuke Iida
, Yuntian Chen
, Yiyu Ou
, Satoshi Kamiyama
, Haiyan Ou

Huazhong University of Science and Technology
Meijo University

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed.Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.

Original language	English
Journal	Journal of Luminescence
Volume	175
Pages (from-to)	213–216
ISSN	0022-2313
DOIs	https://doi.org/10.1016/j.jlumin.2016.03.001
Publication status	Published - 2016

Keywords

GaN LED
Quantum-wells
Photoluminescence
Surface plasmons
Nanoparticles

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@article{dec5601ea64246dd8780c1fe7c5de787,

title = "Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence",

abstract = "We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed.Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.",

keywords = "GaN LED, Quantum-wells, Photoluminescence, Surface plasmons, Nanoparticles",

author = "Ahmed Fadil and Daisuke Iida and Yuntian Chen and Yiyu Ou and Satoshi Kamiyama and Haiyan Ou",

year = "2016",

doi = "10.1016/j.jlumin.2016.03.001",

language = "English",

volume = "175",

pages = "213–216",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier",

}

TY - JOUR

T1 - Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence

AU - Fadil, Ahmed

AU - Iida, Daisuke

AU - Chen, Yuntian

AU - Ou, Yiyu

AU - Kamiyama, Satoshi

AU - Ou, Haiyan

PY - 2016

Y1 - 2016

N2 - We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed.Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.

AB - We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed.Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.

KW - GaN LED

KW - Quantum-wells

KW - Photoluminescence

KW - Surface plasmons

KW - Nanoparticles

U2 - 10.1016/j.jlumin.2016.03.001

DO - 10.1016/j.jlumin.2016.03.001

M3 - Journal article

SN - 0022-2313

VL - 175

SP - 213

EP - 216

JO - Journal of Luminescence

JF - Journal of Luminescence

ER -

Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence

Abstract

Keywords

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