Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence

Ahmed Fadil, Daisuke Iida, Yuntian Chen, Yiyu Ou, Satoshi Kamiyama, Haiyan Ou

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed.Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.
Original languageEnglish
JournalJournal of Luminescence
Volume175
Pages (from-to)213–216
ISSN0022-2313
DOIs
Publication statusPublished - 2016

Keywords

  • GaN LED
  • Quantum-wells
  • Photoluminescence
  • Surface plasmons
  • Nanoparticles

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