The voltage modulation depth of a high T(c) dc-SQUID was measured at temperatures close to T(c) and compared to a model by Enpuku et al. where the flux noise from the SQUID inductance is taken into account. The device was an YBa2Cu3O7 dc-SQUID made on a bicrystal substrate of SrTiO3. The design was of the Ketchen square-washer type with an inductance of 67 pH. Measurements were made in a temperature interval from 75 to 87 K, where the voltage modulation depth changed from 4.5 to 1.4 muV in close agreement with the model.