Influence of inductance induced noise in an YBa2Cu3O7 dc-SQUID at high operation temperatures

P. Å. Nilsson; T. Claeson; J. B. Hansen; Anders Kyhle

doi:10.1063/1.111594

Influence of inductance induced noise in an YBa2Cu3O7 dc-SQUID at high operation temperatures

P. Å. Nilsson, T. Claeson, J. B. Hansen, Anders Kyhle

Department of Physics

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Abstract

The voltage modulation depth of a high T(c) dc-SQUID was measured at temperatures close to T(c) and compared to a model by Enpuku et al. where the flux noise from the SQUID inductance is taken into account. The device was an YBa2Cu3O7 dc-SQUID made on a bicrystal substrate of SrTiO3. The design was of the Ketchen square-washer type with an inductance of 67 pH. Measurements were made in a temperature interval from 75 to 87 K, where the voltage modulation depth changed from 4.5 to 1.4 muV in close agreement with the model.

Original language	English
Journal	Applied Physics Letters
Volume	64
Issue number	18
Pages (from-to)	2445-2447
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.111594
Publication status	Published - 1994

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Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

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title = "Influence of inductance induced noise in an YBa2Cu3O7 dc-SQUID at high operation temperatures",

abstract = "The voltage modulation depth of a high T(c) dc-SQUID was measured at temperatures close to T(c) and compared to a model by Enpuku et al. where the flux noise from the SQUID inductance is taken into account. The device was an YBa2Cu3O7 dc-SQUID made on a bicrystal substrate of SrTiO3. The design was of the Ketchen square-washer type with an inductance of 67 pH. Measurements were made in a temperature interval from 75 to 87 K, where the voltage modulation depth changed from 4.5 to 1.4 muV in close agreement with the model.",

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AU - Nilsson, P. Å.

AU - Claeson, T.

AU - Hansen, J. B.

AU - Kyhle, Anders

N1 - Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

PY - 1994

Y1 - 1994

N2 - The voltage modulation depth of a high T(c) dc-SQUID was measured at temperatures close to T(c) and compared to a model by Enpuku et al. where the flux noise from the SQUID inductance is taken into account. The device was an YBa2Cu3O7 dc-SQUID made on a bicrystal substrate of SrTiO3. The design was of the Ketchen square-washer type with an inductance of 67 pH. Measurements were made in a temperature interval from 75 to 87 K, where the voltage modulation depth changed from 4.5 to 1.4 muV in close agreement with the model.

AB - The voltage modulation depth of a high T(c) dc-SQUID was measured at temperatures close to T(c) and compared to a model by Enpuku et al. where the flux noise from the SQUID inductance is taken into account. The device was an YBa2Cu3O7 dc-SQUID made on a bicrystal substrate of SrTiO3. The design was of the Ketchen square-washer type with an inductance of 67 pH. Measurements were made in a temperature interval from 75 to 87 K, where the voltage modulation depth changed from 4.5 to 1.4 muV in close agreement with the model.

U2 - 10.1063/1.111594

DO - 10.1063/1.111594

M3 - Journal article

VL - 64

SP - 2445

EP - 2447

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -

Influence of inductance induced noise in an YBa2Cu3O7 dc-SQUID at high operation temperatures

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