Abstract
The voltage modulation depth of a high T(c) dc-SQUID was measured at temperatures close to T(c) and compared to a model by Enpuku et al. where the flux noise from the SQUID inductance is taken into account. The device was an YBa2Cu3O7 dc-SQUID made on a bicrystal substrate of SrTiO3. The design was of the Ketchen square-washer type with an inductance of 67 pH. Measurements were made in a temperature interval from 75 to 87 K, where the voltage modulation depth changed from 4.5 to 1.4 muV in close agreement with the model.
Original language | English |
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Journal | Applied Physics Letters |
Volume | 64 |
Issue number | 18 |
Pages (from-to) | 2445-2447 |
ISSN | 0003-6951 |
DOIs | |
Publication status | Published - 1994 |