Influence of charged oxide layers on TEM imaging of reverse-biased p-n junctions

Marco Beleggia, P. F. Fazzini, P. G. Merli, G. Pozzi

Research output: Contribution to journalJournal articleResearchpeer-review


Experimental observations of reverse-biased p-n junctions by means of the out-of-focus method display features which cannot be interpreted within the standard theory of an abrupt p-n junction. In order to reconcile theory and experiment it is necessary to introduce an active role of the specimen surfaces. In particular it is shown how the introduction of a suitable surface density charge at the interface between the silicon and oxide created after the thinning process allows us to explain the main features of the experimental results. Moreover, some questions left unanswered by previous observations made by Lorentz and holographic methods will be clarified. The results point out that oxide charging cannot be overlooked and should be properly taken into account whenever semiconductor devices are observed by transmission electron microscopy techniques, especially when these methods are employed for the analysis of dopant diffusion in submicron devices
Original languageEnglish
JournalPhysical Review B
Issue number4
Number of pages45,328
Publication statusPublished - 2003
Externally publishedYes


Dive into the research topics of 'Influence of charged oxide layers on TEM imaging of reverse-biased p-n junctions'. Together they form a unique fingerprint.

Cite this