Influence of bulk dielectric polarization and void geometry upon PD transients

Iain Wilson McAllister; George C Crichton

doi:10.1109/CEIDP.1999.804625

Influence of bulk dielectric polarization and void geometry upon PD transients

Iain Wilson McAllister, George C Crichton

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

The induced charge arising from a partial discharge consists of a component associated with the actual space charge in the void, and one related to changes in the polarization of the bulk dielectric. These changes are brought about by the field produced by the space charge. The influence of the void geometry upon the polarization component of the induced charge is examined for a heterogeneous bulk dielectric system. It is demonstrated that the relative magnitude of this component may either increase or decrease, depending on the ratio of the dielectric permittivities and within which dielectric the void is located. The magnitude of this effect is also dependent upon the prolateness/oblateness of the void geometry and on the orientation of the void.

Original language	English
Title of host publication	1999 Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, IEEE Publication 99CH36319
Place of Publication	New York
Publisher	IEEE
Publication date	1999
Pages	197-201
ISBN (Print)	0-7803-5414-1
DOIs	https://doi.org/10.1109/CEIDP.1999.804625
Publication status	Published - 1999
Event	Conference on Electrical Insulation and Dielectric Phenomena 1999 - Austin, TX, United States Duration: 17 Oct 1999 → 20 Oct 1999 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6531

Conference

Conference	Conference on Electrical Insulation and Dielectric Phenomena 1999
Country/Territory	United States
City	Austin, TX
Period	17/10/1999 → 20/10/1999
Internet address	http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6531

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Copyright 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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title = "Influence of bulk dielectric polarization and void geometry upon PD transients",

abstract = "The induced charge arising from a partial discharge consists of a component associated with the actual space charge in the void, and one related to changes in the polarization of the bulk dielectric. These changes are brought about by the field produced by the space charge. The influence of the void geometry upon the polarization component of the induced charge is examined for a heterogeneous bulk dielectric system. It is demonstrated that the relative magnitude of this component may either increase or decrease, depending on the ratio of the dielectric permittivities and within which dielectric the void is located. The magnitude of this effect is also dependent upon the prolateness/oblateness of the void geometry and on the orientation of the void.",

author = "McAllister, {Iain Wilson} and Crichton, {George C}",

note = "Copyright 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.; Conference on Electrical Insulation and Dielectric Phenomena 1999 ; Conference date: 17-10-1999 Through 20-10-1999",

year = "1999",

doi = "10.1109/CEIDP.1999.804625",

language = "English",

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booktitle = "1999 Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, IEEE Publication 99CH36319",

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address = "United States",

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McAllister, IW & Crichton, GC 1999, Influence of bulk dielectric polarization and void geometry upon PD transients. in 1999 Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, IEEE Publication 99CH36319. IEEE, New York, pp. 197-201, Conference on Electrical Insulation and Dielectric Phenomena 1999, Austin, TX, United States, 17/10/1999. https://doi.org/10.1109/CEIDP.1999.804625

Influence of bulk dielectric polarization and void geometry upon PD transients. / McAllister, Iain Wilson; Crichton, George C.
1999 Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, IEEE Publication 99CH36319. New York: IEEE, 1999. p. 197-201.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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N1 - Copyright 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

PY - 1999

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N2 - The induced charge arising from a partial discharge consists of a component associated with the actual space charge in the void, and one related to changes in the polarization of the bulk dielectric. These changes are brought about by the field produced by the space charge. The influence of the void geometry upon the polarization component of the induced charge is examined for a heterogeneous bulk dielectric system. It is demonstrated that the relative magnitude of this component may either increase or decrease, depending on the ratio of the dielectric permittivities and within which dielectric the void is located. The magnitude of this effect is also dependent upon the prolateness/oblateness of the void geometry and on the orientation of the void.

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BT - 1999 Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, IEEE Publication 99CH36319

PB - IEEE

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T2 - Conference on Electrical Insulation and Dielectric Phenomena 1999

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ER -

Influence of bulk dielectric polarization and void geometry upon PD transients

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