Inductively coupled plasma dry etching for nano structured III-V on Si lasers

Sushil Tandukar, Il Sug Chung

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Abstract

A systematic study using ICP with Cl/N/Ar chemistry to fabricate sub-μm wide high aspect ratio III-V grating bars wafer bonded to a Si wafer for BIC laser is reported.

Original languageEnglish
Title of host publicationProceedings of 23rd Opto-Electronics and Communications Conference
Number of pages2
PublisherIEEE
Publication date1 Jul 2018
Article number8730039
ISBN (Electronic)9781538691458
DOIs
Publication statusPublished - 1 Jul 2018
Event23rd Opto-Electronics and Communications Conference, OECC 2018 - Jeju, Korea, Republic of
Duration: 2 Jul 20186 Jul 2018

Conference

Conference23rd Opto-Electronics and Communications Conference, OECC 2018
Country/TerritoryKorea, Republic of
CityJeju
Period02/07/201806/07/2018
Series23rd Opto-Electronics and Communications Conference, OECC 2018

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