Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

Irina Kulkova; David Larsson; Elizaveta Semenova; Kresten Yvind

doi:10.1109/ISLC.2012.6348364

Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

Irina Kulkova, David Larsson, Elizaveta Semenova, Kresten Yvind

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.

Original language	English
Title of host publication	2012 23rd IEEE International Semiconductor Laser Conference (ISLC)
Publisher	IEEE
Publication date	2012
Pages	133-134
ISBN (Print)	978-1-4577-0828-2
DOIs	https://doi.org/10.1109/ISLC.2012.6348364
Publication status	Published - 2012
Event	23rd IEEE International Semiconductor Laser Conference (ISLC 2012) - San Diego, California, United States Duration: 7 Oct 2012 → 10 Oct 2012 http://www.islc-ieee.org/

Conference

Conference	23rd IEEE International Semiconductor Laser Conference (ISLC 2012)
Country/Territory	United States
City	San Diego, California
Period	07/10/2012 → 10/10/2012
Internet address	http://www.islc-ieee.org/

Series	I E E E International Semiconductor Laser Conference. Conference Digest
ISSN	0899-9406

Keywords

Mode-locked lasers
Semiconductor lasers
Selective area growth

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10.1109/ISLC.2012.6348364

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title = "Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers",

abstract = "We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.",

keywords = "Mode-locked lasers, Semiconductor lasers, Selective area growth",

author = "Irina Kulkova and David Larsson and Elizaveta Semenova and Kresten Yvind",

year = "2012",

doi = "10.1109/ISLC.2012.6348364",

language = "English",

isbn = "978-1-4577-0828-2",

series = "I E E E International Semiconductor Laser Conference. Conference Digest",

publisher = "IEEE",

pages = "133--134 ",

booktitle = "2012 23rd IEEE International Semiconductor Laser Conference (ISLC)",

address = "United States",

note = "23rd IEEE International Semiconductor Laser Conference (ISLC 2012) ; Conference date: 07-10-2012 Through 10-10-2012",

url = "http://www.islc-ieee.org/",

}

Kulkova, I, Larsson, D, Semenova, E & Yvind, K 2012, Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers. in 2012 23rd IEEE International Semiconductor Laser Conference (ISLC). IEEE, I E E E International Semiconductor Laser Conference. Conference Digest, pp. 133-134 , 23rd IEEE International Semiconductor Laser Conference (ISLC 2012), San Diego, California, United States, 07/10/2012. https://doi.org/10.1109/ISLC.2012.6348364

Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers. / Kulkova, Irina; Larsson, David; Semenova, Elizaveta et al.
2012 23rd IEEE International Semiconductor Laser Conference (ISLC). IEEE, 2012. p. 133-134 (I E E E International Semiconductor Laser Conference. Conference Digest).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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T1 - Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

AU - Kulkova, Irina

AU - Larsson, David

AU - Semenova, Elizaveta

AU - Yvind, Kresten

PY - 2012

Y1 - 2012

N2 - We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.

AB - We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.

KW - Mode-locked lasers

KW - Semiconductor lasers

KW - Selective area growth

U2 - 10.1109/ISLC.2012.6348364

DO - 10.1109/ISLC.2012.6348364

M3 - Article in proceedings

SN - 978-1-4577-0828-2

T3 - I E E E International Semiconductor Laser Conference. Conference Digest

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EP - 134

BT - 2012 23rd IEEE International Semiconductor Laser Conference (ISLC)

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T2 - 23rd IEEE International Semiconductor Laser Conference (ISLC 2012)

Y2 - 7 October 2012 through 10 October 2012

ER -

Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

Abstract

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Keywords

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