InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices

Bilal Kousar, Damon J. Carrad*, Lukas Stampfer, Peter Krogstrup, Jesper Nygård, Thomas S. Jespersen*

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

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Abstract

Implementing superconductors capable of proximity-inducing a large energy gap in semiconductors in the presence of strong magnetic fields is a major goal toward applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact with molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures of ~10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to ~10 K, and MoRe-based Josephson devices exhibited supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature and observe gap softening at finite magnetic field. These may be common features for hybrids based on large-gap, type II superconductors. The results encourage further development of MoRe-based hybrids.
Original languageEnglish
JournalNano Letters
Volume22
Issue number22
Pages (from-to)8845-8851
Number of pages7
ISSN1530-6984
DOIs
Publication statusPublished - 2022

Keywords

  • Semiconductor/superconductor hybrid
  • Molybdenum−rhenium
  • Indium arsenide
  • Nanowire
  • Tunnel spectroscopy
  • Josephson junction

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