InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers

Elizaveta Semenova; Irina Kulkova; Shima Kadkhodazadeh; Martin Schubert; Rafal E. Dunin-Borkowski; Kresten Yvind

InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers

Elizaveta Semenova, Irina Kulkova, Shima Kadkhodazadeh, Martin Schubert, Rafal E. Dunin-Borkowski, Kresten Yvind

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5μm region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5 layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 μm wavelength at room temperature.

Original language	English
Title of host publication	2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM)
Publisher	IEEE
Publication date	2011
ISBN (Print)	978-1-4577-1753-6
Publication status	Published - 2011
Event	23rd International Conference on Indium Phosphide and Related Materials - Maritim proArte Hotel, Berlin, Germany Duration: 22 May 2011 → 25 May 2011 Conference number: 23

Conference

Conference	23rd International Conference on Indium Phosphide and Related Materials
Number	23
Location	Maritim proArte Hotel
Country/Territory	Germany
City	Berlin
Period	22/05/2011 → 25/05/2011

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Semenova, E., Kulkova, I., Kadkhodazadeh, S., Schubert, M., Dunin-Borkowski, R. E., & Yvind, K. (2011). InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers. In 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM) IEEE. http://conference.vde.com/csw2011/Pages/Homepage.aspx

@inproceedings{1a9e14eeac3a4c769901262c9aa79fbd,

title = "InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers",

abstract = "In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5μm region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5 layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 μm wavelength at room temperature.",

author = "Elizaveta Semenova and Irina Kulkova and Shima Kadkhodazadeh and Martin Schubert and Dunin-Borkowski, {Rafal E.} and Kresten Yvind",

year = "2011",

language = "English",

isbn = "978-1-4577-1753-6",

booktitle = "2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM)",

publisher = "IEEE",

address = "United States",

note = "23rd International Conference on Indium Phosphide and Related Materials, IPRM ; Conference date: 22-05-2011 Through 25-05-2011",

}

Semenova, E, Kulkova, I, Kadkhodazadeh, S, Schubert, M, Dunin-Borkowski, RE & Yvind, K 2011, InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers. in 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM). IEEE, 23rd International Conference on Indium Phosphide and Related Materials, Berlin, Germany, 22/05/2011. <http://conference.vde.com/csw2011/Pages/Homepage.aspx>

InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers. / Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima et al.
2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM). IEEE, 2011.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers

AU - Semenova, Elizaveta

AU - Kulkova, Irina

AU - Kadkhodazadeh, Shima

AU - Schubert, Martin

AU - Dunin-Borkowski, Rafal E.

AU - Yvind, Kresten

N1 - Conference code: 23

PY - 2011

Y1 - 2011

N2 - In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5μm region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5 layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 μm wavelength at room temperature.

AB - In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5μm region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5 layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 μm wavelength at room temperature.

M3 - Article in proceedings

SN - 978-1-4577-1753-6

BT - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM)

PB - IEEE

T2 - 23rd International Conference on Indium Phosphide and Related Materials

Y2 - 22 May 2011 through 25 May 2011

ER -

InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers

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