InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers

Elizaveta Semenova, Irina Kulkova, Shima Kadkhodazadeh, Martin Schubert, Rafal E. Dunin-Borkowski, Kresten Yvind

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5μm region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5 layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 μm wavelength at room temperature.
Original languageEnglish
Title of host publication2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM)
PublisherIEEE
Publication date2011
ISBN (Print)978-1-4577-1753-6
Publication statusPublished - 2011
Event23rd International Conference on Indium Phosphide and Related Materials - Maritim proArte Hotel, Berlin, Germany
Duration: 22 May 201125 May 2011
Conference number: 23

Conference

Conference23rd International Conference on Indium Phosphide and Related Materials
Number23
LocationMaritim proArte Hotel
CountryGermany
CityBerlin
Period22/05/201125/05/2011

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