InAs/GaAs quantum dots as efficient free carrier deep traps

Dmitry Turchinovich, K. Pierz, Peter Uhd Jepsen

Research output: Contribution to journalJournal articleResearchpeer-review


The results of optical-pump THz-probe experiment on InAs/GaAs quantum dot structures are discussed in this paper. In InAs/GaAs quantum dot strutures the free carrier lifetime is observed to be substantially shorter than that in bulk GaAs, especially at weak pump powers. We attribute this behaviour mainly to the trapping of free carriers into the quantum dots.
Original languageEnglish
JournalPhysica Status Solidi. C, Current topics in solid state physics
Issue number5
Pages (from-to)1556-1559
Publication statusPublished - 2003
Externally publishedYes


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