InAs/GaAs quantum dots as efficient free carrier deep traps

Dmitry Turchinovich; K. Pierz; Peter Uhd Jepsen

doi:10.1002/pssc.200303230

InAs/GaAs quantum dots as efficient free carrier deep traps

Dmitry Turchinovich, K. Pierz, Peter Uhd Jepsen

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

The results of optical-pump THz-probe experiment on InAs/GaAs quantum dot structures are discussed in this paper. In InAs/GaAs quantum dot strutures the free carrier lifetime is observed to be substantially shorter than that in bulk GaAs, especially at weak pump powers. We attribute this behaviour mainly to the trapping of free carriers into the quantum dots.

Original language	English
Journal	Physica Status Solidi. C, Current topics in solid state physics
Volume	0
Issue number	5
Pages (from-to)	1556-1559
ISSN	1610-1634
DOIs	https://doi.org/10.1002/pssc.200303230
Publication status	Published - 2003
Externally published	Yes

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title = "InAs/GaAs quantum dots as efficient free carrier deep traps",

abstract = "The results of optical-pump THz-probe experiment on InAs/GaAs quantum dot structures are discussed in this paper. In InAs/GaAs quantum dot strutures the free carrier lifetime is observed to be substantially shorter than that in bulk GaAs, especially at weak pump powers. We attribute this behaviour mainly to the trapping of free carriers into the quantum dots.",

author = "Dmitry Turchinovich and K. Pierz and Jepsen, {Peter Uhd}",

year = "2003",

doi = "10.1002/pssc.200303230",

language = "English",

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pages = "1556--1559",

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TY - JOUR

T1 - InAs/GaAs quantum dots as efficient free carrier deep traps

AU - Turchinovich, Dmitry

AU - Pierz, K.

AU - Jepsen, Peter Uhd

PY - 2003

Y1 - 2003

N2 - The results of optical-pump THz-probe experiment on InAs/GaAs quantum dot structures are discussed in this paper. In InAs/GaAs quantum dot strutures the free carrier lifetime is observed to be substantially shorter than that in bulk GaAs, especially at weak pump powers. We attribute this behaviour mainly to the trapping of free carriers into the quantum dots.

AB - The results of optical-pump THz-probe experiment on InAs/GaAs quantum dot structures are discussed in this paper. In InAs/GaAs quantum dot strutures the free carrier lifetime is observed to be substantially shorter than that in bulk GaAs, especially at weak pump powers. We attribute this behaviour mainly to the trapping of free carriers into the quantum dots.

U2 - 10.1002/pssc.200303230

DO - 10.1002/pssc.200303230

M3 - Journal article

VL - 0

SP - 1556

EP - 1559

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 5

ER -

InAs/GaAs quantum dots as efficient free carrier deep traps

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