InAs1-xPx nanowires for device engineering

A. I. Persson; M. T. Björk; S. Jeppesen; Jakob Birkedal Wagner; L. R. Wallenberg; L. Samuelson

doi:10.1021/nl052181e

InAs1-xPx nanowires for device engineering

A. I. Persson, M. T. Björk, S. Jeppesen, Jakob Birkedal Wagner, L. R. Wallenberg, L. Samuelson

Lund University

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2 eV. Finally, homogeneous InAs 0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at room temperature.

Original language	English
Journal	Nano Letters
Volume	6
Issue number	3
Pages (from-to)	403-407
Number of pages	5
ISSN	1530-6984
DOIs	https://doi.org/10.1021/nl052181e
Publication status	Published - 2006
Externally published	Yes

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title = "InAs1-xPx nanowires for device engineering",

abstract = "We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2 eV. Finally, homogeneous InAs 0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at room temperature.",

author = "Persson, {A. I.} and Bj{\"o}rk, {M. T.} and S. Jeppesen and Wagner, {Jakob Birkedal} and Wallenberg, {L. R.} and L. Samuelson",

year = "2006",

doi = "10.1021/nl052181e",

language = "English",

volume = "6",

pages = "403--407",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

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TY - JOUR

T1 - InAs1-xPx nanowires for device engineering

AU - Persson, A. I.

AU - Björk, M. T.

AU - Jeppesen, S.

AU - Wagner, Jakob Birkedal

AU - Wallenberg, L. R.

AU - Samuelson, L.

PY - 2006

Y1 - 2006

N2 - We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2 eV. Finally, homogeneous InAs 0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at room temperature.

AB - We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2 eV. Finally, homogeneous InAs 0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at room temperature.

U2 - 10.1021/nl052181e

DO - 10.1021/nl052181e

M3 - Journal article

C2 - 16522031

SN - 1530-6984

VL - 6

SP - 403

EP - 407

JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

InAs1-xPx nanowires for device engineering

Abstract

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