InAlGaAs/AlGaAs quantum wells: line widths, transition energies and segregation

Jacob Riis Jensen; Jørn Märcher Hvam; Wolfgang Langbein

doi:10.1016/S0167-9317(99)00489-X

InAlGaAs/AlGaAs quantum wells: line widths, transition energies and segregation

Jacob Riis Jensen, Jørn Märcher Hvam, Wolfgang Langbein

TU Dortmund University

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

We investigate the optical properties of InAlCaAs/AlGaAs quantum wells pseudomorphically grown on GaAs using molecular beam epitaxy (MBE). The transition energies, measured with photoluminescence (PL), are modelled solving the Schrodinger equation, and taking into account segregation in the group III sublattice. From a fit to the transition energies, an empirical band gap relation for InAlGaAs is found, in the composition range relevant for growth on GaAs. The PL lines at low temperature (T = 10 K) are broadened due to random alloy fluctuations and an interface roughness of 1.1 monolayers. Finally, the use of InAlGaAs/AlGaAs quantum wells for making strained T-shaped quantum wires is demonstrated. (C) 2000 Elsevier Science B.V. All rights reserved.

Original language	English
Journal	Microelectronic Engineering
Volume	51-52
Pages (from-to)	257-264
ISSN	0167-9317
DOIs	https://doi.org/10.1016/S0167-9317(99)00489-X
Publication status	Published - 2000
Event	3rd International Conference on Low Dimensional Structures and Devices (LDSD 99) - Antalya, Turkey Duration: 15 Sept 1999 → 17 Sept 1999 Conference number: 3

Conference

Conference	3rd International Conference on Low Dimensional Structures and Devices (LDSD 99)
Number	3
Country/Territory	Turkey
City	Antalya
Period	15/09/1999 → 17/09/1999

Keywords

quaternary quantum wells
segregation
alloy fluctuations
photoluminescence

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10.1016/S0167-9317(99)00489-X

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title = "InAlGaAs/AlGaAs quantum wells: line widths, transition energies and segregation",

abstract = "We investigate the optical properties of InAlCaAs/AlGaAs quantum wells pseudomorphically grown on GaAs using molecular beam epitaxy (MBE). The transition energies, measured with photoluminescence (PL), are modelled solving the Schrodinger equation, and taking into account segregation in the group III sublattice. From a fit to the transition energies, an empirical band gap relation for InAlGaAs is found, in the composition range relevant for growth on GaAs. The PL lines at low temperature (T = 10 K) are broadened due to random alloy fluctuations and an interface roughness of 1.1 monolayers. Finally, the use of InAlGaAs/AlGaAs quantum wells for making strained T-shaped quantum wires is demonstrated. (C) 2000 Elsevier Science B.V. All rights reserved. ",

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author = "Jensen, {Jacob Riis} and Hvam, {J{\o}rn M{\"a}rcher} and Wolfgang Langbein",

year = "2000",

doi = "10.1016/S0167-9317(99)00489-X",

language = "English",

volume = "51-52",

pages = "257--264",

journal = "Microelectronic Engineering",

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note = "3rd International Conference on Low Dimensional Structures and Devices (LDSD 99), LDSD 99 ; Conference date: 15-09-1999 Through 17-09-1999",

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T1 - InAlGaAs/AlGaAs quantum wells: line widths, transition energies and segregation

AU - Jensen, Jacob Riis

AU - Hvam, Jørn Märcher

AU - Langbein, Wolfgang

N1 - Conference code: 3

PY - 2000

Y1 - 2000

N2 - We investigate the optical properties of InAlCaAs/AlGaAs quantum wells pseudomorphically grown on GaAs using molecular beam epitaxy (MBE). The transition energies, measured with photoluminescence (PL), are modelled solving the Schrodinger equation, and taking into account segregation in the group III sublattice. From a fit to the transition energies, an empirical band gap relation for InAlGaAs is found, in the composition range relevant for growth on GaAs. The PL lines at low temperature (T = 10 K) are broadened due to random alloy fluctuations and an interface roughness of 1.1 monolayers. Finally, the use of InAlGaAs/AlGaAs quantum wells for making strained T-shaped quantum wires is demonstrated. (C) 2000 Elsevier Science B.V. All rights reserved.

AB - We investigate the optical properties of InAlCaAs/AlGaAs quantum wells pseudomorphically grown on GaAs using molecular beam epitaxy (MBE). The transition energies, measured with photoluminescence (PL), are modelled solving the Schrodinger equation, and taking into account segregation in the group III sublattice. From a fit to the transition energies, an empirical band gap relation for InAlGaAs is found, in the composition range relevant for growth on GaAs. The PL lines at low temperature (T = 10 K) are broadened due to random alloy fluctuations and an interface roughness of 1.1 monolayers. Finally, the use of InAlGaAs/AlGaAs quantum wells for making strained T-shaped quantum wires is demonstrated. (C) 2000 Elsevier Science B.V. All rights reserved.

KW - quaternary quantum wells

KW - segregation

KW - alloy fluctuations

KW - photoluminescence

U2 - 10.1016/S0167-9317(99)00489-X

DO - 10.1016/S0167-9317(99)00489-X

M3 - Conference article

SN - 0167-9317

VL - 51-52

SP - 257

EP - 264

JO - Microelectronic Engineering

JF - Microelectronic Engineering

T2 - 3rd International Conference on Low Dimensional Structures and Devices (LDSD 99)

Y2 - 15 September 1999 through 17 September 1999

ER -

InAlGaAs/AlGaAs quantum wells: line widths, transition energies and segregation

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Keywords

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