InAlGaAs/AlGaAs quantum wells: line widths, transition energies and segregation

Jacob Riis Jensen, Jørn Märcher Hvam, Wolfgang Langbein

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

We investigate the optical properties of InAlCaAs/AlGaAs quantum wells pseudomorphically grown on GaAs using molecular beam epitaxy (MBE). The transition energies, measured with photoluminescence (PL), are modelled solving the Schrodinger equation, and taking into account segregation in the group III sublattice. From a fit to the transition energies, an empirical band gap relation for InAlGaAs is found, in the composition range relevant for growth on GaAs. The PL lines at low temperature (T = 10 K) are broadened due to random alloy fluctuations and an interface roughness of 1.1 monolayers. Finally, the use of InAlGaAs/AlGaAs quantum wells for making strained T-shaped quantum wires is demonstrated. (C) 2000 Elsevier Science B.V. All rights reserved.
Original languageEnglish
JournalMicroelectronic Engineering
Volume51-52
Pages (from-to)257-264
ISSN0167-9317
DOIs
Publication statusPublished - 2000
Event3rd International Conference on Low Dimensional Structures and Devices (LDSD 99) - Antalya, Turkey
Duration: 15 Sep 199917 Sep 1999
Conference number: 3

Conference

Conference3rd International Conference on Low Dimensional Structures and Devices (LDSD 99)
Number3
Country/TerritoryTurkey
CityAntalya
Period15/09/199917/09/1999

Keywords

  • quaternary quantum wells
  • segregation
  • alloy fluctuations
  • photoluminescence

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