In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy

S. Ambrosini; Jakob Birkedal Wagner; Tim Booth; Alexey Savenko; Giulio Fragiacomo; Peter Bøggild; S. Rubini

In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy

S. Ambrosini, Jakob Birkedal Wagner, Tim Booth, Alexey Savenko, Giulio Fragiacomo, Peter Bøggild, S. Rubini

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

Self catalyzed GaAs nanowires grown on Si-treated GaAs substrates were studied with a transmission electron microscope before and after annealing at 600◦C. At room temperature the nanowires have a zincblende structure and are locally characterized by a high density of rotational twins and stacking faults. Selected area diffraction patterns and high-resolution transmission electron microscopy images show that nanowires undergo structural modifications upon annealing, suggesting a decrease of defect density following the thermal treatment.

Original language	English
Title of host publication	In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy
Publication date	2011
Publication status	Published - 2011
Event	18th International Symposium "Nanostructures: Physics and Technology" - Ekaterinburg, Russian Federation Duration: 20 Jun 2011 → 25 Jun 2011

Conference

Conference	18th International Symposium "Nanostructures: Physics and Technology"
Country/Territory	Russian Federation
City	Ekaterinburg
Period	20/06/2011 → 25/06/2011

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Ambrosini, S., Wagner, J. B., Booth, T., Savenko, A., Fragiacomo, G., Bøggild, P., & Rubini, S. (2011). In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy. In In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy

@inproceedings{f59d4276db6241b393fe796a42424190,

title = "In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy",

abstract = "Self catalyzed GaAs nanowires grown on Si-treated GaAs substrates were studied with a transmission electron microscope before and after annealing at 600◦C. At room temperature the nanowires have a zincblende structure and are locally characterized by a high density of rotational twins and stacking faults. Selected area diffraction patterns and high-resolution transmission electron microscopy images show that nanowires undergo structural modifications upon annealing, suggesting a decrease of defect density following the thermal treatment.",

author = "S. Ambrosini and Wagner, {Jakob Birkedal} and Tim Booth and Alexey Savenko and Giulio Fragiacomo and Peter B{\o}ggild and S. Rubini",

year = "2011",

language = "English",

booktitle = "In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy",

note = "18th International Symposium {"}Nanostructures: Physics and Technology{"} ; Conference date: 20-06-2011 Through 25-06-2011",

}

Ambrosini, S, Wagner, JB , Booth, T, Savenko, A, Fragiacomo, G, Bøggild, P & Rubini, S 2011, In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy. in In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy. 18th International Symposium "Nanostructures: Physics and Technology", Ekaterinburg, Russian Federation, 20/06/2011.

In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy. / Ambrosini, S.; Wagner, Jakob Birkedal ; Booth, Tim et al.
In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy. 2011.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy

AU - Ambrosini, S.

AU - Wagner, Jakob Birkedal

AU - Booth, Tim

AU - Savenko, Alexey

AU - Fragiacomo, Giulio

AU - Bøggild, Peter

AU - Rubini, S.

PY - 2011

Y1 - 2011

N2 - Self catalyzed GaAs nanowires grown on Si-treated GaAs substrates were studied with a transmission electron microscope before and after annealing at 600◦C. At room temperature the nanowires have a zincblende structure and are locally characterized by a high density of rotational twins and stacking faults. Selected area diffraction patterns and high-resolution transmission electron microscopy images show that nanowires undergo structural modifications upon annealing, suggesting a decrease of defect density following the thermal treatment.

AB - Self catalyzed GaAs nanowires grown on Si-treated GaAs substrates were studied with a transmission electron microscope before and after annealing at 600◦C. At room temperature the nanowires have a zincblende structure and are locally characterized by a high density of rotational twins and stacking faults. Selected area diffraction patterns and high-resolution transmission electron microscopy images show that nanowires undergo structural modifications upon annealing, suggesting a decrease of defect density following the thermal treatment.

M3 - Article in proceedings

BT - In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy

T2 - 18th International Symposium "Nanostructures: Physics and Technology"

Y2 - 20 June 2011 through 25 June 2011

ER -

In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy

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