Self catalyzed GaAs nanowires grown on Si-treated GaAs substrates were studied with a transmission electron microscope before and after annealing at 600◦C. At room temperature the nanowires have a zincblende structure and are locally characterized by a high density of rotational twins and stacking faults. Selected area diffraction patterns and high-resolution transmission electron microscopy images show that nanowires undergo structural modifications upon annealing, suggesting a decrease of defect density following the thermal treatment.
|Title of host publication||In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy|
|Publication status||Published - 2011|
|Event||18. International Symposium. Nanostructures: Physics and Technology - Ekaterinburg, Russia|
Duration: 1 Jan 2011 → …
|Conference||18. International Symposium. Nanostructures: Physics and Technology|
|Period||01/01/2011 → …|