In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy

S. Ambrosini, Jakob Birkedal Wagner, Tim Booth, Alexey Savenko, Giulio Fragiacomo, Peter Bøggild, S. Rubini

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    Abstract

    Self catalyzed GaAs nanowires grown on Si-treated GaAs substrates were studied with a transmission electron microscope before and after annealing at 600◦C. At room temperature the nanowires have a zincblende structure and are locally characterized by a high density of rotational twins and stacking faults. Selected area diffraction patterns and high-resolution transmission electron microscopy images show that nanowires undergo structural modifications upon annealing, suggesting a decrease of defect density following the thermal treatment.
    Original languageEnglish
    Title of host publicationIn situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy
    Publication date2011
    Publication statusPublished - 2011
    Event18. International Symposium. Nanostructures: Physics and Technology - Ekaterinburg, Russia
    Duration: 1 Jan 2011 → …

    Conference

    Conference18. International Symposium. Nanostructures: Physics and Technology
    CityEkaterinburg, Russia
    Period01/01/2011 → …

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