The phase and texture formation of La doped CeO2 (CLO) films deposited by the chemical solution method are studied by in situ synchrotron x-ray diffraction. It is found that the CLO crystallites forms excellent in-plane texture as soon as the phase appears at 860°C, indicating that interfacial nucleation dominates at the beginning of the amorphous–crystallization transition. Grain growth is almost complete after at 900°C for 15min. Analysis of the isothermal process of crystallization at 900°C by the Johnson–Mehl–Avrami–Kolmogorov equation shows that grain development is mainly controlled by diffusion. The success of this work demonstrates the possibility of studying crystallization behaviors of solution derived films using a non-destructive method, which has the potential of being applicable to most types of thin film samples.
- Materials characterisation and modelling