In-situ investigation of the microstructure evolution in nanocrystalline copper electrodeposits at room temperature

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    Abstract

    The microstructure evolution in copper electrodeposits at room temperature (self-annealing) was investigated by means of x-ray diffraction analysis and simultaneous measurements of the electrical resistivity as a function of time. In situ studies were started immediately after deposition of the various thick layers and continued with a unique time resolution until stabilization of the recorded data occurred. Independent of the copper layer thickness, the as-deposited microstructure consisted of nanocrystalline grains with orientation dependent crystallite sizes. Orientation dependent grain growth, crystallographic texture changes by multiple twinning, and a decrease of the electrical resistivity occurred as a function of time at room temperature. The kinetics of self-annealing is strongly affected by the layer thickness: the thinner the layer, the slower the microstructure evolution is, and self-annealing is suppressed completely for a thin layer with 0.4 µm. The preferred crystallographic orientation of the as-deposited crystallites is suggested to cause the observed thickness dependence of the self-annealing kinetics. ©2006 American Institute of Physics
    Original languageEnglish
    JournalJournal of Applied Physics
    Volume100
    Issue number11
    Pages (from-to)114319
    ISSN0021-8979
    DOIs
    Publication statusPublished - 2006

    Bibliographical note

    Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Cite this

    @article{0c2ee61800e2408db4b82e5141fdca68,
    title = "In-situ investigation of the microstructure evolution in nanocrystalline copper electrodeposits at room temperature",
    abstract = "The microstructure evolution in copper electrodeposits at room temperature (self-annealing) was investigated by means of x-ray diffraction analysis and simultaneous measurements of the electrical resistivity as a function of time. In situ studies were started immediately after deposition of the various thick layers and continued with a unique time resolution until stabilization of the recorded data occurred. Independent of the copper layer thickness, the as-deposited microstructure consisted of nanocrystalline grains with orientation dependent crystallite sizes. Orientation dependent grain growth, crystallographic texture changes by multiple twinning, and a decrease of the electrical resistivity occurred as a function of time at room temperature. The kinetics of self-annealing is strongly affected by the layer thickness: the thinner the layer, the slower the microstructure evolution is, and self-annealing is suppressed completely for a thin layer with 0.4 µm. The preferred crystallographic orientation of the as-deposited crystallites is suggested to cause the observed thickness dependence of the self-annealing kinetics. {\circledC}2006 American Institute of Physics",
    author = "Karen Pantleon and Somers, {Marcel A. J.}",
    note = "Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",
    year = "2006",
    doi = "10.1063/1.2401647",
    language = "English",
    volume = "100",
    pages = "114319",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics",
    number = "11",

    }

    In-situ investigation of the microstructure evolution in nanocrystalline copper electrodeposits at room temperature. / Pantleon, Karen; Somers, Marcel A. J.

    In: Journal of Applied Physics, Vol. 100, No. 11, 2006, p. 114319.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - In-situ investigation of the microstructure evolution in nanocrystalline copper electrodeposits at room temperature

    AU - Pantleon, Karen

    AU - Somers, Marcel A. J.

    N1 - Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    PY - 2006

    Y1 - 2006

    N2 - The microstructure evolution in copper electrodeposits at room temperature (self-annealing) was investigated by means of x-ray diffraction analysis and simultaneous measurements of the electrical resistivity as a function of time. In situ studies were started immediately after deposition of the various thick layers and continued with a unique time resolution until stabilization of the recorded data occurred. Independent of the copper layer thickness, the as-deposited microstructure consisted of nanocrystalline grains with orientation dependent crystallite sizes. Orientation dependent grain growth, crystallographic texture changes by multiple twinning, and a decrease of the electrical resistivity occurred as a function of time at room temperature. The kinetics of self-annealing is strongly affected by the layer thickness: the thinner the layer, the slower the microstructure evolution is, and self-annealing is suppressed completely for a thin layer with 0.4 µm. The preferred crystallographic orientation of the as-deposited crystallites is suggested to cause the observed thickness dependence of the self-annealing kinetics. ©2006 American Institute of Physics

    AB - The microstructure evolution in copper electrodeposits at room temperature (self-annealing) was investigated by means of x-ray diffraction analysis and simultaneous measurements of the electrical resistivity as a function of time. In situ studies were started immediately after deposition of the various thick layers and continued with a unique time resolution until stabilization of the recorded data occurred. Independent of the copper layer thickness, the as-deposited microstructure consisted of nanocrystalline grains with orientation dependent crystallite sizes. Orientation dependent grain growth, crystallographic texture changes by multiple twinning, and a decrease of the electrical resistivity occurred as a function of time at room temperature. The kinetics of self-annealing is strongly affected by the layer thickness: the thinner the layer, the slower the microstructure evolution is, and self-annealing is suppressed completely for a thin layer with 0.4 µm. The preferred crystallographic orientation of the as-deposited crystallites is suggested to cause the observed thickness dependence of the self-annealing kinetics. ©2006 American Institute of Physics

    U2 - 10.1063/1.2401647

    DO - 10.1063/1.2401647

    M3 - Journal article

    VL - 100

    SP - 114319

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 11

    ER -