Abstract
| Original language | English |
|---|---|
| Journal | Journal of Applied Physics |
| Volume | 100 |
| Issue number | 11 |
| Pages (from-to) | 114319 |
| ISSN | 0021-8979 |
| DOIs | |
| Publication status | Published - 2006 |
Bibliographical note
Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.Cite this
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In-situ investigation of the microstructure evolution in nanocrystalline copper electrodeposits at room temperature. / Pantleon, Karen; Somers, Marcel A. J.
In: Journal of Applied Physics, Vol. 100, No. 11, 2006, p. 114319.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - In-situ investigation of the microstructure evolution in nanocrystalline copper electrodeposits at room temperature
AU - Pantleon, Karen
AU - Somers, Marcel A. J.
N1 - Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
PY - 2006
Y1 - 2006
N2 - The microstructure evolution in copper electrodeposits at room temperature (self-annealing) was investigated by means of x-ray diffraction analysis and simultaneous measurements of the electrical resistivity as a function of time. In situ studies were started immediately after deposition of the various thick layers and continued with a unique time resolution until stabilization of the recorded data occurred. Independent of the copper layer thickness, the as-deposited microstructure consisted of nanocrystalline grains with orientation dependent crystallite sizes. Orientation dependent grain growth, crystallographic texture changes by multiple twinning, and a decrease of the electrical resistivity occurred as a function of time at room temperature. The kinetics of self-annealing is strongly affected by the layer thickness: the thinner the layer, the slower the microstructure evolution is, and self-annealing is suppressed completely for a thin layer with 0.4 µm. The preferred crystallographic orientation of the as-deposited crystallites is suggested to cause the observed thickness dependence of the self-annealing kinetics. ©2006 American Institute of Physics
AB - The microstructure evolution in copper electrodeposits at room temperature (self-annealing) was investigated by means of x-ray diffraction analysis and simultaneous measurements of the electrical resistivity as a function of time. In situ studies were started immediately after deposition of the various thick layers and continued with a unique time resolution until stabilization of the recorded data occurred. Independent of the copper layer thickness, the as-deposited microstructure consisted of nanocrystalline grains with orientation dependent crystallite sizes. Orientation dependent grain growth, crystallographic texture changes by multiple twinning, and a decrease of the electrical resistivity occurred as a function of time at room temperature. The kinetics of self-annealing is strongly affected by the layer thickness: the thinner the layer, the slower the microstructure evolution is, and self-annealing is suppressed completely for a thin layer with 0.4 µm. The preferred crystallographic orientation of the as-deposited crystallites is suggested to cause the observed thickness dependence of the self-annealing kinetics. ©2006 American Institute of Physics
U2 - 10.1063/1.2401647
DO - 10.1063/1.2401647
M3 - Journal article
VL - 100
SP - 114319
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11
ER -