Improvement of the dose uniformity in plasma immersed ion implantation by introducing a vertical biased ring

Eugen Stamate, N. Holtzer, H. Sugai

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

It is shown that the sheath evolving to a negatively biased wafer during the plasma immersed ion implantation focuses the positive ions to distinct regions on the surface resulting in a poor uniformity of the ion dose. The focusing mechanism is investigated and solutions to improve the ion dose uniformity are proposed based on three-dimensional calculations of the potential distribution and ion trajectories within the sheath structure. Simulations are confirmed at lower scale in a DC Ar plasma which allows an easier visualization of the focusing phenomenon simultaneously with the measurement of the involved currents.
Original languageEnglish
JournalThin Solid Films
Volume506-507
Pages (from-to)571-574
ISSN0040-6090
DOIs
Publication statusPublished - 2006
Externally publishedYes

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