Improvement of power characteristics in 850 nm quantum well laser with asymmetric barriers

F.I. Zubov; M.V. Maximov; YuM. Shernyakov; N.Yu Gordeev; A.M. Nadtochiy; N.V. Kryzhanovskaya; Elizaveta Semenova; Kresten Yvind; L.V. Asryan; A.E. Zhukov

doi:10.1109/IPCon.2015.7323556

Improvement of power characteristics in 850 nm quantum well laser with asymmetric barriers

F.I. Zubov, M.V. Maximov, YuM. Shernyakov, N.Yu Gordeev, A.M. Nadtochiy, N.V. Kryzhanovskaya, Elizaveta Semenova, Kresten Yvind, L.V. Asryan, A.E. Zhukov

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Power and spectral characteristics of lasers with asymmetric barrier layers (ABLs) and a wide waveguide are studied. The use of ABLs reduces the saturation of light-current characteristic, associated with the parasitic recombination in the waveguide.

Original language	English
Title of host publication	Proceedings of 2015 IEEE Photonics Conference
Publisher	IEEE
Publication date	2015
Pages	565-566
ISBN (Print)	9781479974658
DOIs	https://doi.org/10.1109/IPCon.2015.7323556
Publication status	Published - 2015
Event	2015 IEEE Photonics Conference - Hyatt Regency Reston, Reston, United States Duration: 4 Oct 2015 → 8 Oct 2015 https://ieeexplore.ieee.org/xpl/conhome/7312535/proceeding

Conference

Conference	2015 IEEE Photonics Conference
Location	Hyatt Regency Reston
Country/Territory	United States
City	Reston
Period	04/10/2015 → 08/10/2015
Internet address	https://ieeexplore.ieee.org/xpl/conhome/7312535/proceeding

Keywords

Photonics and Electrooptics
Charge carrier processes
Gallium arsenide
Optical pumping
Optical saturation
Radiative recombination
Temperature

Access to Document

10.1109/IPCon.2015.7323556

SFX availability

Full text

Cite this

Zubov, F. I., Maximov, M. V., Shernyakov, Y., Gordeev, N. Y., Nadtochiy, A. M., Kryzhanovskaya, N. V., Semenova, E., Yvind, K., Asryan, L. V., & Zhukov, A. E. (2015). Improvement of power characteristics in 850 nm quantum well laser with asymmetric barriers. In Proceedings of 2015 IEEE Photonics Conference (pp. 565-566). IEEE. https://doi.org/10.1109/IPCon.2015.7323556

@inproceedings{d380045e143a4019abe375a4e0605f43,

title = "Improvement of power characteristics in 850 nm quantum well laser with asymmetric barriers",

abstract = "Power and spectral characteristics of lasers with asymmetric barrier layers (ABLs) and a wide waveguide are studied. The use of ABLs reduces the saturation of light-current characteristic, associated with the parasitic recombination in the waveguide.",

keywords = "Photonics and Electrooptics, Charge carrier processes, Gallium arsenide, Optical pumping, Optical saturation, Radiative recombination, Temperature",

author = "F.I. Zubov and M.V. Maximov and YuM. Shernyakov and N.Yu Gordeev and A.M. Nadtochiy and N.V. Kryzhanovskaya and Elizaveta Semenova and Kresten Yvind and L.V. Asryan and A.E. Zhukov",

year = "2015",

doi = "10.1109/IPCon.2015.7323556",

language = "English",

isbn = "9781479974658",

pages = "565--566",

booktitle = "Proceedings of 2015 IEEE Photonics Conference",

publisher = "IEEE",

address = "United States",

note = "2015 IEEE Photonics Conference, IPC 2015 ; Conference date: 04-10-2015 Through 08-10-2015",

url = "https://ieeexplore.ieee.org/xpl/conhome/7312535/proceeding",

}

Zubov, FI, Maximov, MV, Shernyakov, Y, Gordeev, NY, Nadtochiy, AM, Kryzhanovskaya, NV, Semenova, E , Yvind, K, Asryan, LV & Zhukov, AE 2015, Improvement of power characteristics in 850 nm quantum well laser with asymmetric barriers. in Proceedings of 2015 IEEE Photonics Conference. IEEE, pp. 565-566, 2015 IEEE Photonics Conference, Reston, Virginia, United States, 04/10/2015. https://doi.org/10.1109/IPCon.2015.7323556

Improvement of power characteristics in 850 nm quantum well laser with asymmetric barriers. / Zubov, F.I.; Maximov, M.V.; Shernyakov, YuM.; Gordeev, N.Yu; Nadtochiy, A.M.; Kryzhanovskaya, N.V.; Semenova, Elizaveta ; Yvind, Kresten; Asryan, L.V.; Zhukov, A.E.

Proceedings of 2015 IEEE Photonics Conference. IEEE, 2015. p. 565-566.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Improvement of power characteristics in 850 nm quantum well laser with asymmetric barriers

AU - Zubov, F.I.

AU - Maximov, M.V.

AU - Shernyakov, YuM.

AU - Gordeev, N.Yu

AU - Nadtochiy, A.M.

AU - Kryzhanovskaya, N.V.

AU - Semenova, Elizaveta

AU - Yvind, Kresten

AU - Asryan, L.V.

AU - Zhukov, A.E.

PY - 2015

Y1 - 2015

N2 - Power and spectral characteristics of lasers with asymmetric barrier layers (ABLs) and a wide waveguide are studied. The use of ABLs reduces the saturation of light-current characteristic, associated with the parasitic recombination in the waveguide.

AB - Power and spectral characteristics of lasers with asymmetric barrier layers (ABLs) and a wide waveguide are studied. The use of ABLs reduces the saturation of light-current characteristic, associated with the parasitic recombination in the waveguide.

KW - Photonics and Electrooptics

KW - Charge carrier processes

KW - Gallium arsenide

KW - Optical pumping

KW - Optical saturation

KW - Radiative recombination

KW - Temperature

U2 - 10.1109/IPCon.2015.7323556

DO - 10.1109/IPCon.2015.7323556

M3 - Article in proceedings

SN - 9781479974658

SP - 565

EP - 566

BT - Proceedings of 2015 IEEE Photonics Conference

PB - IEEE

T2 - 2015 IEEE Photonics Conference

Y2 - 4 October 2015 through 8 October 2015

ER -

Improvement of power characteristics in 850 nm quantum well laser with asymmetric barriers

Abstract

Conference

Keywords

Access to Document

SFX availability

Fingerprint

Cite this