Improvement of power characteristics in 850 nm quantum well laser with asymmetric barriers

F.I. Zubov, M.V. Maximov, YuM. Shernyakov, N.Yu Gordeev, A.M. Nadtochiy, N.V. Kryzhanovskaya, Elizaveta Semenova, Kresten Yvind, L.V. Asryan, A.E. Zhukov

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Power and spectral characteristics of lasers with asymmetric barrier layers (ABLs) and a wide waveguide are studied. The use of ABLs reduces the saturation of light-current characteristic, associated with the parasitic recombination in the waveguide.
Original languageEnglish
Title of host publicationProceedings of 2015 IEEE Photonics Conference
PublisherIEEE
Publication date2015
Pages565-566
ISBN (Print)9781479974658
DOIs
Publication statusPublished - 2015
Event2015 IEEE Photonics Conference - Hyatt Regency Reston, Reston, Virginia, United States
Duration: 4 Oct 20158 Oct 2015

Conference

Conference2015 IEEE Photonics Conference
LocationHyatt Regency Reston
CountryUnited States
CityReston, Virginia
Period04/10/201508/10/2015

Keywords

  • Photonics and Electrooptics
  • Charge carrier processes
  • Gallium arsenide
  • Optical pumping
  • Optical saturation
  • Radiative recombination
  • Temperature

Cite this

Zubov, F. I., Maximov, M. V., Shernyakov, Y., Gordeev, N. Y., Nadtochiy, A. M., Kryzhanovskaya, N. V., Semenova, E., Yvind, K., Asryan, L. V., & Zhukov, A. E. (2015). Improvement of power characteristics in 850 nm quantum well laser with asymmetric barriers. In Proceedings of 2015 IEEE Photonics Conference (pp. 565-566). IEEE. https://doi.org/10.1109/IPCon.2015.7323556