Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars

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Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure.
Original languageEnglish
Publication date2014
Number of pages3
Publication statusPublished - 2014
EventSolid-State and Organic Lighting - Australian National University, Canberra, Australia
Duration: 2 Dec 20145 Dec 2014

Conference

ConferenceSolid-State and Organic Lighting
LocationAustralian National University
CountryAustralia
CityCanberra
Period02/12/201405/12/2014

ID: 104359156