Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars

Ahmed Fadil; Yiyu Ou; Haiyan Ou

Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars

Ahmed Fadil
, Yiyu Ou
, Haiyan Ou

Research output: Contribution to conference › Conference abstract for conference › Research › peer-review

Abstract

Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure.

Original language	English
Publication date	2014
Number of pages	3
Publication status	Published - 2014
Event	Solid-State and Organic Lighting 2014 - Australian National University, Canberra, Australia Duration: 2 Dec 2014 → 5 Dec 2014

Conference

Conference	Solid-State and Organic Lighting 2014
Location	Australian National University
Country/Territory	Australia
City	Canberra
Period	02/12/2014 → 05/12/2014

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@conference{571ef45708a84b5abd1311657dbcf5e7,

title = "Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars",

abstract = " Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure. ",

author = "Ahmed Fadil and Yiyu Ou and Haiyan Ou",

year = "2014",

language = "English",

note = "Solid-State and Organic Lighting 2014, SOLED 2014 ; Conference date: 02-12-2014 Through 05-12-2014",

}

TY - ABST

T1 - Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars

AU - Fadil, Ahmed

AU - Ou, Yiyu

AU - Ou, Haiyan

PY - 2014

Y1 - 2014

N2 - Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure.

AB - Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure.

M3 - Conference abstract for conference

T2 - Solid-State and Organic Lighting 2014

Y2 - 2 December 2014 through 5 December 2014

ER -

Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars

Abstract

Conference

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