Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure.
|Number of pages||3|
|Publication status||Published - 2014|
|Event||Solid-State and Organic Lighting - Australian National University, Canberra, Australia|
Duration: 2 Dec 2014 → 5 Dec 2014
|Conference||Solid-State and Organic Lighting|
|Location||Australian National University|
|Period||02/12/2014 → 05/12/2014|
Fadil, A., Ou, Y., & Ou, H. (2014). Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars. Abstract from Solid-State and Organic Lighting , Canberra, Australia.