Imposed quasi-layer-by-layer homoepitaxial growth of SrTiO3 films by large area pulsed laser deposition

The homoepitaxial growth of SrTiO3 (STO) films was investigated by a large-area pulsed laser deposition (PLD), which was in-situ monitored by a high pressure reflective high energy electron diffraction. By combining a conventionally continuous film deposition with a followed interval relaxation, a persistent layer-by-layer (LBL) film growth of more than 100 unit cells STO films was achieved. This interrupted PLD technique could realize persistent LBL film growth at any laser frequency between 1 and 10 Hz and provides an effective way to fabricate high quality complex oxide films on unit cell scale.