Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC

Abebe T. Tarekegne, K. Norrman, V. Jokubavicius, M. Syväjärvi, P. Schuh, P. Wellmann, H. Ou*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

High concentrations of aluminum (Al) and nitrogen (N) dopants of 6H SiC have been achieved by a fast sublimation growth process. The Al–N co-doped 6H-SiC layer exhibits a strong light-blue photoluminescence emission at low temperatures due to emissions from DI centers and donor acceptor pairs (DAP). The photoluminescence quenching mechanisms of those emissions are different. The decrease of free carrier capture cross-section as temperature increases according to the cascade capture process causes quenching of the photoluminescence emission form DI centers. Emission from Al–N DAP centers exhibits an exponential quenching with activation energy of (95 ± 10) meV. This is attributed to a competing hole capture by non-radiative defect in a multiphonon emission process.
Original languageEnglish
Article number172
JournalApplied Physics B
Volume125
Issue number9
Number of pages5
ISSN0946-2171
DOIs
Publication statusPublished - 2019

Cite this

Tarekegne, Abebe T. ; Norrman, K. ; Jokubavicius, V. ; Syväjärvi, M. ; Schuh, P. ; Wellmann, P. ; Ou, H. / Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC. In: Applied Physics B. 2019 ; Vol. 125, No. 9.
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title = "Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC",
abstract = "High concentrations of aluminum (Al) and nitrogen (N) dopants of 6H SiC have been achieved by a fast sublimation growth process. The Al–N co-doped 6H-SiC layer exhibits a strong light-blue photoluminescence emission at low temperatures due to emissions from DI centers and donor acceptor pairs (DAP). The photoluminescence quenching mechanisms of those emissions are different. The decrease of free carrier capture cross-section as temperature increases according to the cascade capture process causes quenching of the photoluminescence emission form DI centers. Emission from Al–N DAP centers exhibits an exponential quenching with activation energy of (95 ± 10) meV. This is attributed to a competing hole capture by non-radiative defect in a multiphonon emission process.",
author = "Tarekegne, {Abebe T.} and K. Norrman and V. Jokubavicius and M. Syv{\"a}j{\"a}rvi and P. Schuh and P. Wellmann and H. Ou",
year = "2019",
doi = "10.1007/s00340-019-7279-8",
language = "English",
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Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC. / Tarekegne, Abebe T.; Norrman, K.; Jokubavicius, V.; Syväjärvi, M.; Schuh, P.; Wellmann, P.; Ou, H.

In: Applied Physics B, Vol. 125, No. 9, 172, 2019.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC

AU - Tarekegne, Abebe T.

AU - Norrman, K.

AU - Jokubavicius, V.

AU - Syväjärvi, M.

AU - Schuh, P.

AU - Wellmann, P.

AU - Ou, H.

PY - 2019

Y1 - 2019

N2 - High concentrations of aluminum (Al) and nitrogen (N) dopants of 6H SiC have been achieved by a fast sublimation growth process. The Al–N co-doped 6H-SiC layer exhibits a strong light-blue photoluminescence emission at low temperatures due to emissions from DI centers and donor acceptor pairs (DAP). The photoluminescence quenching mechanisms of those emissions are different. The decrease of free carrier capture cross-section as temperature increases according to the cascade capture process causes quenching of the photoluminescence emission form DI centers. Emission from Al–N DAP centers exhibits an exponential quenching with activation energy of (95 ± 10) meV. This is attributed to a competing hole capture by non-radiative defect in a multiphonon emission process.

AB - High concentrations of aluminum (Al) and nitrogen (N) dopants of 6H SiC have been achieved by a fast sublimation growth process. The Al–N co-doped 6H-SiC layer exhibits a strong light-blue photoluminescence emission at low temperatures due to emissions from DI centers and donor acceptor pairs (DAP). The photoluminescence quenching mechanisms of those emissions are different. The decrease of free carrier capture cross-section as temperature increases according to the cascade capture process causes quenching of the photoluminescence emission form DI centers. Emission from Al–N DAP centers exhibits an exponential quenching with activation energy of (95 ± 10) meV. This is attributed to a competing hole capture by non-radiative defect in a multiphonon emission process.

U2 - 10.1007/s00340-019-7279-8

DO - 10.1007/s00340-019-7279-8

M3 - Journal article

VL - 125

JO - Applied Physics B

JF - Applied Physics B

SN - 0946-2171

IS - 9

M1 - 172

ER -