Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array

Abebe Tilahun Tarekegne, Krzysztof Iwaszczuk, Maksim Zalkovskij, Andrew Strikwerda, Peter Uhd Jepsen

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Abstract

We report on the observation of ultrafast impact ionization and carrier generation in high resistivity silicon induced by intense subpicosecond terahertz transients. Local terahertz peak electric fields of several MV cm−1 are obtained by field enhancement in the near field of a resonant metallic antenna array. The carrier multiplication is probed by the frequency shift of the resonance of the antenna array due to the change of the local refractive index of the substrate. Experimental results and simulations show that the carrier density in silicon increases by over seven orders of magnitude in the presence of an intense terahertz field. The enhancement of the resonance shift for illumination from the substrate side in comparison to illumination from the antenna side is consistent with our prediction that the back illumination is highly beneficial for a wide range of nonlinear processes.
Original languageEnglish
Article number043002
JournalNew Journal of Physics
Volume17
Number of pages9
ISSN1367-2630
DOIs
Publication statusPublished - 2015

Bibliographical note

Content from this work may be used under the terms of theCreative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of
the work, journal citation and DOI.

Keywords

  • Impact ionization
  • THz filed
  • Antenna arrays
  • Silicon

Cite this

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title = "Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array",
abstract = "We report on the observation of ultrafast impact ionization and carrier generation in high resistivity silicon induced by intense subpicosecond terahertz transients. Local terahertz peak electric fields of several MV cm−1 are obtained by field enhancement in the near field of a resonant metallic antenna array. The carrier multiplication is probed by the frequency shift of the resonance of the antenna array due to the change of the local refractive index of the substrate. Experimental results and simulations show that the carrier density in silicon increases by over seven orders of magnitude in the presence of an intense terahertz field. The enhancement of the resonance shift for illumination from the substrate side in comparison to illumination from the antenna side is consistent with our prediction that the back illumination is highly beneficial for a wide range of nonlinear processes.",
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year = "2015",
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language = "English",
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Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array. / Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Zalkovskij, Maksim; Strikwerda, Andrew; Jepsen, Peter Uhd.

In: New Journal of Physics, Vol. 17, 043002, 2015.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array

AU - Tarekegne, Abebe Tilahun

AU - Iwaszczuk, Krzysztof

AU - Zalkovskij, Maksim

AU - Strikwerda, Andrew

AU - Jepsen, Peter Uhd

N1 - Content from this work may be used under the terms of theCreative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

PY - 2015

Y1 - 2015

N2 - We report on the observation of ultrafast impact ionization and carrier generation in high resistivity silicon induced by intense subpicosecond terahertz transients. Local terahertz peak electric fields of several MV cm−1 are obtained by field enhancement in the near field of a resonant metallic antenna array. The carrier multiplication is probed by the frequency shift of the resonance of the antenna array due to the change of the local refractive index of the substrate. Experimental results and simulations show that the carrier density in silicon increases by over seven orders of magnitude in the presence of an intense terahertz field. The enhancement of the resonance shift for illumination from the substrate side in comparison to illumination from the antenna side is consistent with our prediction that the back illumination is highly beneficial for a wide range of nonlinear processes.

AB - We report on the observation of ultrafast impact ionization and carrier generation in high resistivity silicon induced by intense subpicosecond terahertz transients. Local terahertz peak electric fields of several MV cm−1 are obtained by field enhancement in the near field of a resonant metallic antenna array. The carrier multiplication is probed by the frequency shift of the resonance of the antenna array due to the change of the local refractive index of the substrate. Experimental results and simulations show that the carrier density in silicon increases by over seven orders of magnitude in the presence of an intense terahertz field. The enhancement of the resonance shift for illumination from the substrate side in comparison to illumination from the antenna side is consistent with our prediction that the back illumination is highly beneficial for a wide range of nonlinear processes.

KW - Impact ionization

KW - THz filed

KW - Antenna arrays

KW - Silicon

U2 - 10.1088/1367-2630/17/4/043002

DO - 10.1088/1367-2630/17/4/043002

M3 - Journal article

VL - 17

JO - New Journal of Physics

JF - New Journal of Physics

SN - 1367-2630

M1 - 043002

ER -