Impact ionization dynamics in silicon by MV/cm THz fields

Abebe Tilahun Tarekegne, Hideki Hirori, Koichiro Tanaka, Krzysztof Iwaszczuk, Peter Uhd Jepsen

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    Abstract

    We investigate the dynamics of the impact ionization (IMI) process in silicon in extremely high fields in the MV/cm range and at low initial carrier concentrations; conditions that are not accessible with conventional transport measurements. We use ultrafast measurements with high-intensity terahertz pulses to show that IMI is significantly more efficient at lower than at higher initial carrier densities. Specifically, in the case of silicon with an intrinsic carrier concentration (∼1010 cm−3), the carrier multiplication process can generate more than 108 electrons from just a single free electron. The photoexcited carrier density dependence of the IMI rate shows that with decreasing initial carrier density the rate increases and approaches the fundamental Okuto limit imposed by energy conservation.
    Original languageEnglish
    Article number123018
    JournalNew Journal of Physics
    Volume19
    Issue number12
    Number of pages8
    ISSN1367-2630
    DOIs
    Publication statusPublished - 2017

    Keywords

    • Impact ionization
    • Ultrafast dynamics
    • Silicon
    • Terahertz

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