III-V/SOI vertical cavity laser structure for 120 Gbit/s speed

Gyeong Cheol Park, Weiqi Xue, Jesper Mørk, Elizaveta Semenova, Il-Sug Chung

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Abstract

Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA.
Original languageEnglish
Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics 2015
PublisherOptical Society of America
Publication date2015
Article numberJT5A.2
ISBN (Print)978-1-55752-000-5
DOIs
Publication statusPublished - 2015
EventIntegrated Photonics Research, Silicon and Nanophotonics 2015 - Boston, Massachusetts, United States
Duration: 27 Jun 20151 Jul 2015

Conference

ConferenceIntegrated Photonics Research, Silicon and Nanophotonics 2015
CountryUnited States
CityBoston, Massachusetts
Period27/06/201501/07/2015

Bibliographical note

From the session: Postdeadline (JT5A)

Keywords

  • Electronic, Optical and Magnetic Materials
  • Magnetic materials
  • Light output
  • Si-waveguide
  • Ultra-short cavity
  • Vertical cavity lasers
  • Optical materials
  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Optical sensors

Cite this

Park, G. C., Xue, W., Mørk, J., Semenova, E., & Chung, I-S. (2015). III-V/SOI vertical cavity laser structure for 120 Gbit/s speed. In Integrated Photonics Research, Silicon and Nanophotonics 2015 [JT5A.2] Optical Society of America. https://doi.org/10.1364/iprsn.2015.jt5a.2