III-V/SOI vertical cavity laser structure for 120 Gbit/s speed

Gyeong Cheol Park, Weiqi Xue, Jesper Mørk, Elizaveta Semenova, Il-Sug Chung

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    366 Downloads (Pure)

    Abstract

    Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA.
    Original languageEnglish
    Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics 2015
    PublisherOptical Society of America
    Publication date2015
    Article numberJT5A.2
    ISBN (Print)978-1-55752-000-5
    DOIs
    Publication statusPublished - 2015
    EventIntegrated Photonics Research, Silicon and Nanophotonics 2015 - Boston, United States
    Duration: 27 Jun 20151 Jul 2015

    Conference

    ConferenceIntegrated Photonics Research, Silicon and Nanophotonics 2015
    Country/TerritoryUnited States
    CityBoston
    Period27/06/201501/07/2015

    Bibliographical note

    From the session: Postdeadline (JT5A)

    Keywords

    • Electronic, Optical and Magnetic Materials
    • Magnetic materials
    • Light output
    • Si-waveguide
    • Ultra-short cavity
    • Vertical cavity lasers
    • Optical materials
    • Electrical and Electronic Engineering
    • Hardware and Architecture
    • Optical sensors

    Fingerprint

    Dive into the research topics of 'III-V/SOI vertical cavity laser structure for 120 Gbit/s speed'. Together they form a unique fingerprint.

    Cite this